Product Information

TH58BVG3S0HBAI4

TH58BVG3S0HBAI4 electronic component of Kioxia America

Datasheet
NAND Flash 8Gb SLC BENAND 24nm BGA 9x11 1.8V EEPROM 4K Page
Manufacturer: Kioxia America
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 12.836 ea
Line Total: USD 12.84

64 - Global Stock
Ships to you between
Mon. 13 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1

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38 - WHS 1


Ships to you between Mon. 13 May to Wed. 15 May

MOQ : 1
Multiples : 1

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TH58BVG3S0HBAI4
Kioxia America

1 : USD 9.5795
10 : USD 8.9585
25 : USD 8.7745

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Additional Infomation About Product

TH58BVG3S0HBAI4 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT (1G 8 BIT) CMOS NAND E PROM DESCRIPTION The TH58BVG3S0HBAI4 is a single3. 3V 8Gbit (8,858,370,048 bits) NAND Electrically Erasable and 2 Programmable Read-Only Memory (NAND E PROM) organized as (4096 + 128) bytes 64 pages 4096 blocks. The device has a 4224- byte static register which allows program and read data to be transferred between the register and the memory cell array in 4224-bytes increments. The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes 64 pages). The TH58BVG3S0HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The TH58BVG3S0HBAI4 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally. FEATURES Organization x8 Memory cell array 4224 128K 8 2 Register 4224 8 Page size 4224 bytes Block size (256K + 8K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read Mode control Serial input/output Command control Number of valid blocks Min 4016 blocks Max 4096 blocks Power supply VCC = 2.7V to 3.6V Access time Cell array to register 55 s typ. (Single Page Read) / 90 s typ. (Multi Page Read) Read Cycle Time 25 ns min (C =50pF) L Program/Erase time Auto Page Program 340 s/page typ. Auto Block Erase 2.5 ms/block typ. Operating current Read (25 ns cycle) 30 mA max Program (avg.) 30 mA max Erase (avg.) 30 mA max Standby 100 A max Package P-TFBGA63-0911-0.80CZ (Weight: 0.165 g typ.) 8bit ECC for each 528Byte is implemented on the chip. 2013-2018 Toshiba Memory Corporation 2018-06-01C 1 TH58BVG3S0HBAI4 PIN ASSIGNMENT (TOP VIEW) 1 2 3 4 5 6 7 8 9 10 A NC NC NC NC B NC NC NC C WP ALE V CE WE RY/BY SS D NC RE CLE NC NC NC E NC NC NC NC NC NC F NC NC NC NC NC NC G NC NC NC NC NC NC H NC I/O1 NC NC NC V CC J NC I/O2 NC V I/O6 I/O8 CC K V I/O3 I/O4 I/O5 I/O7 V SS SS L NC NC NC NC M NC NC NC NC PIN NAMES I/O1 to I/O8 I/O port CE Chip enable WE Write enable RE Read enable CLE Command latch enable ALE Address latch enable WP Write protect RY/BY Ready/Busy V Power supply CC V Ground SS NC No Connection 2013-2018 Toshiba Memory Corporation 2018-06-01C 2

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

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