X-On Electronics has gained recognition as a prominent supplier of L2N7002LT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. L2N7002LT1G MOSFETs are a product manufactured by Leshan. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

L2N7002LT1G Leshan

Name: L2N7002LT1G
Brand: Leshan
SKU: L2N7002LT1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

L2N7002LT1G electronic component of Leshan

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See Product Specifications

Part No.	L2N7002LT1G
Manufacturer:	Leshan
Category:	MOSFETs
Description:	MOSFET N Trench 60V 2V @ 250uA 7.5 Î© @ 500mA,10V SOT-23 (SOT-23-3) RoHS
Datasheet:	L2N7002LT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0228 ea
Line Total: USD 1.14

Availability - 304871
Ship by Tue. 27 May to Fri. 30 May

MOQ: 50 Multiples: 50
Pack Size: 50

L2N7002LT1G More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

304871

Ship by Tue. 27 May to Fri. 30 May

MOQ : 50
Multiples : 50

50 : USD 0.0228
500 : USD 0.0178
3000 : USD 0.01
6000 : USD 0.0089
24000 : USD 0.0079
51000 : USD 0.0073

Specifications

Manufacturer

Leshan Leshan

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category

Leshan Leshan

Fet Type

n trench n trench

Drain To Source Voltagevdss

60 V 60 V

Vgsth Max @ Id

2v @ 250ua 2v @ 250ua

Rds On Max @ Id Vgs

7.5 @ 500ma,10v 7.5 @ 500ma,10v

Power Dissipation-Max Ta

300 mW 300 mW

Drain Source Voltage Vdss

60 V 60 V

Continuous Drain Current Id

- -

Power Dissipation Pd

300 mW 300 mW

Drain Source On Resistance Rdson@Vgs Id

7.5 Ohms @10V , 500mA 7.5 Ohms @10V , 500mA

Gate Threshold Voltage Vgsth@Id

2 V @250uA 2 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

L2N7002LT1G Alternative Parts

We are delighted to provide the L2N7002LT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the L2N7002LT1G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

Radio:The Leshan Radio L2N7002LT1G is a SOT-23-3 MOSFET N-Trench 60V 2V @ 250uA 7.5 Î© @ 500mA, 10V RoHS manufactured part. It is designed for Power MOSFET applications featuring high integration and fast switching speed. The device has high surge current capability and superior gate charge characteristics with low RDSON and low gate charge. Its low input capacitance and high breakdown voltage provide excellent protection for high frequency applications. The device is RoHS compliant and is designed to meet the latest environmental safety standards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Availability	Price	Buy Price	Quantity
304871 Ship by Tue. 27 May to Fri. 30 May MOQ : 50 Multiples : 50	50 : USD 0.0228 500 : USD 0.0178 3000 : USD 0.01 6000 : USD 0.0089 24000 : USD 0.0079 51000 : USD 0.0073

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