Product Information

L2N7002LT1G

L2N7002LT1G electronic component of Leshan

Datasheet
MOSFET N Trench 60V 2V @ 250uA 7.5 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
Manufacturer: Leshan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.0226 ea
Line Total: USD 1.13

68320 - Global Stock
Ships to you between
Fri. 03 May to Wed. 08 May
MOQ: 50  Multiples: 50
Pack Size: 50

 More Buying Options & Price Grid(s)

Availability Price Quantity
108300 - Global Stock


Ships to you between
Fri. 03 May to Wed. 08 May

MOQ : 50
Multiples : 50

Stock Image

L2N7002LT1G
Leshan

50 : USD 0.0163
500 : USD 0.0131
3000 : USD 0.0113
6000 : USD 0.0103
24000 : USD 0.0093
51000 : USD 0.0088

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

Radio:The Leshan Radio L2N7002LT1G is a SOT-23-3 MOSFET N-Trench 60V 2V @ 250uA 7.5 Ω @ 500mA, 10V RoHS manufactured part. It is designed for Power MOSFET applications featuring high integration and fast switching speed. The device has high surge current capability and superior gate charge characteristics with low RDSON and low gate charge. Its low input capacitance and high breakdown voltage provide excellent protection for high frequency applications. The device is RoHS compliant and is designed to meet the latest environmental safety standards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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