1 3 High-Performance T-1 /4 (5 mm) TS AlGaAs Infrared (875 nm) Lamp HSDL-4200 Series Technical Data HSDL-4220 30 HSDL-4230 17 Features Copper Leadframe for Improved Thermal and Very High Power TS AlGaAs Optical Characteristics Technology 875 nm Wavelength 3 Applications T-1 /4 Package IR Audio Low Cost IR Telephones Very High Intensity: HSDL-4220 - 38 mW/sr High Speed IR HSDL-4230 - 75 mW/sr Communications IR LANs Choice of Viewing Angle: IR Modems HSDL-4220 - 30 Interfaces with Crystal IR Dongles HSDL-4230 - 17 Semiconductor CS8130 Industrial IR Equipment Low Forward Voltage for Infrared Transceiver Series Operation IR Portable Instruments High Speed: 40 ns Rise Times Description The HSDL-4200 series of emitters are the first in a sequence of Package Dimensions emitters that are aimed at high 5.00 0.20 (0.197 0.008) power, low forward voltage, and high speed. These emitters utilize 1.14 0.20 8.70 0.20 (0.045 0.008) the Transparent Substrate, double (0.343 0.008) heterojunction, Aluminum Gal- 2.35 MAX. lium Arsenide (TS AlGaAs) LED (0.093) technology. These devices are optimized for speed and efficiency 0.70 MAX. (0.028) at emission wavelengths of 875 nm. This material produces high CATHODE 31.4 MIN. (1.23) radiant efficiency over a wide range of currents up to 500 mA peak current. The HSDL-4200 0.50 0.10 SQUARE (0.020 0.004) series of emitters are available in 1.27 a choice of viewing angles, the NOM. (0.050) HSDL-4230 at 17 and the HSDL-4220 at 30. Both lamps 3 5.80 0.20 are packaged in clear T-1 /4 CATHODE (0.228 0.008) (5 mm) packages. 2.54 NOM. (0.100)2 The package design of these The wide angle emitter, HSDL- emitters is optimized for efficient 4220, is compatible with the IrDA power dissipation. Copper SIR standard and can be used leadframes are used to obtain with the HSDL-1000 integrated better thermal performance than SIR transceiver. the traditional steel leadframes. Absolute Maximum Ratings Parameter Symbol Min. Max. Unit Reference Peak Forward Current I 500 mA 2 , Fig. 2b FPK Duty Factor = 20% Pulse Width = 100 s Average Forward Current I 100 mA 2 FAVG DC Forward Current I 100 mA 1 , Fig. 2a FDC Power Dissipation P 260 mW DISS Reverse Voltage (I = 100 A) V5V R R Transient Forward Current (10 s Pulse) I 1.0 A 3 FTR Operating Temperature T 070 C O Storage Temperature T -20 85 C S LED Junction Temperature T 110 C J Lead Soldering Temperature 260 for C 1.6 mm (0.063 in.) from body 5 seconds Notes: 1. Derate linearly as shown in Figure 4. 2. Any pulsed operation cannot exceed the Absolute Max Peak Forward Current as specified in Figure 5. 3. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and the wire bonds. Electrical Characteristics at 25C Parameter Symbol Min. Typ. Max. Unit Condition Reference Forward Voltage V 1.30 1.50 1.70 V I = 50 mA Fig. 2a F FDC 2.15 I = 250 mA Fig. 2b FPK Forward Voltage V/T -2.1 mV/CI = 50 mA Fig. 2c FDC Temperature Coefficient -2.1 I = 100 mA FDC Series Resistance R 2.8 ohms I = 100 mA S FDC Diode Capacitance C 40 pF 0 V, 1 MHz O Reverse Voltage V 220 V I = 100 A R R Thermal Resistance, R 110 C/W jp Junction to Pin