2N6344 Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies or wherever fullwave silicon gate controlled solidstate devices are 2N6344 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 2.2 C/W JC Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Sec T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current I , DRM (V = Rated V , V Gate Open) I D DRM RRM RRM 10 A T = 25C J 2.0 mA T = 100C J ON CHARACTERISTICS Peak OnState Voltage V 1.3 1.55 V TM (I = 11 A Peak Pulse Width = 1 to 2 ms, Duty Cycle 2%) TM Gate Trigger Current (Continuous dc) (V = 12 Vdc, R = 100 ) I mA GT D L Quadrant I: MT2(+), G(+) Both 12 50 Quadrant II: MT2(+), G() 2N6349 only 12 75 Quadrant III: MT2(), G() Both 20 50 Quadrant IV: MT2(), G(+) 2N6349 only 35 75 MT2(+), G(+) MT2(), G() T = 40C 100 C 125 MT2(+), G() MT2(), G(+) T = 40C C Gate Trigger Voltage (Continuous dc) (V = 12 Vdc, R = 100 ) V V D L GT Quadrant I: MT2(+), G(+) Both 0.9 2.0 Quadrant II: MT2(+), G() 2N6349 only 0.9 2.5 Quadrant III: MT2(), G() Both 1.1 2.0 1.4 2.5 Quadrant IV: MT2(), G(+) 2N6349 only MT2(+), G(+) MT2(), G() T = 40C 2.5 C MT2(+), G() MT2(), G(+) T = 40C 3.0 C Gate NonTrigger Voltage (Continuous dc) V V GD (V = Rated V , R = 10 k , T = 100C) D DRM L J MT2(+), G(+) MT2(), G() MT2(+), G() MT2(), G() 0.2 Holding Current (V = 12 Vdc, Gate Open) T = 25C I 6.0 40 mA D C H (Initiating Current = 200 mA) *T = 40C C 75 Turn-On Time t 1.5 2.0 s gt (V = Rated V , I = 11 A, I = 120 mA, Rise Time = 0.1 s, Pulse Width = 2 s) D DRM TM GT DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage dv/dt(c) 5.0 V/ s (V = Rated V , I = 11 A, Commutating di/dt = 4.0 A/ms, Gate Unenergized, T = 80C) D DRM TM C Indicates JEDEC Registered Data.