L0109MTRP

Thyristors EV Series 1 Amp Sensitive Triacs RoHS L01 Series Description This new 1A bi-directional solid state switch series offers direct interlace to microprocessor drivers in a TO-92 and surface mount packages. The die voltage blocking junctions are glass-passivated to ensure long term reliability and parametric stability. Features RoHS compliant and Static dv/dt > 20 Volts/ Halogen-Free sec Bloc king voltage (V ) Thru hole and surface DRM capability up to 800V mount packages Surge capabilit y > 10Amps Main Features Applications The L01 EV Series is especially designed for white goods Symbol Value Unit applications such as valve controls in washing machines as I 1 A T(RMS) well as replacement of mechanical and hybrid relays where V /V 400 to 800 V long life is required. DRM RRM I 3 to 10 mA GT Schematic Symbol MT2 G MT1 Absolute Maximum Ratings Symbol Parameter Value Unit TO-92 T = 50C RMS on-state current C I 1.0A A T(RMS) (full sine wave) SOT-223 T = 90C L F = 50 Hz 10 Non repetitive surge peak on-state current TO-92 I A TSM (Single cycle, T initial = 25C) SOT-223 J F = 60 Hz 12 t = 10 ms F = 50 Hz 0.50 p 2 2 2 I t I t Value for fusing A s = 8.3 ms F = 60 Hz 0.59 t p TO-92 di/dt Critical rate of rise of on-state current I = 2 x I T = 125C 20 A/s G GT J SOT-223 I Peak gate current t = 10 s T = 125C 1 A GTM p J P Average gate power dissipation T = 125C 0.1 W G(AV) J T Storage junction temperature range -40 to 150 C stg T Operating junction temperature range -40 to 125 C J 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/29/19Thyristors EV Series 1 Amp Sensitive Triacs Electrical Characteristics (T = 25C, unless otherwise specified) J Value Test Symbol Description Quadrant Limit Unit Conditions L0103Ny L0107xy L0109xy - - - MIN. mA I II III - - 5.7 I DC Gate Trigger Current GT V = 12V 3 5 10 IV D MAX. mA R = 60 5 7 10 L V DC Gate Trigger Voltage ALL MAX. 1.3 1.3 1.3 V GT I Holding Current Gate Open MAX. 7 10 10 mA H T = 110C J Critical Rate-of-Rise of Off- V = V D DRM dv/dt MIN. 10 20 50 V/s State Voltage Exponential Waveform Gate Open Critical (di/dt)c = 0.54A/ms (dv/dt)c Rate-of-Rise of Commutating MIN. 0.5 1.0 2.0 V/s T = 110C J Voltage I = 25mA G T Turn-On Time PW = 15s MAX. 2.0 2.0 2.0 s gt I = 1.2A (pk) T Note: x = voltage, y = package Static Characteristics (T = 25C, unless otherwise specified) J Symbol Description Test Conditions Limit Value Unit V Peak On-State Voltage I = 1.4A (pk) MAX 1.60 V TM TM V = V T = 25C 5 A D DRM J I Off-State Current, Peak Repetitive MAX DRM V = V T = 125C 500 A D DRM J Thermal Resistances Symbol Description Test Conditions Value Unit TO-92 50 1 R Junction to case (AC) I = 1.0A C/W th(JC) T (RMS) SOT-223 23 TO-92 100 1 R Junction to ambient I = 1.0A C/W th(j-a) T (RMS) SOT-223 55 1 60Hz AC resistive load condition, 100% conduction. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/29/19