SiC Schottky Diode LFUSCD30120B, 1200 V, 30 A, TO-247 3-lead RoHS Pb LFUSCD30120B Description The LFUSCD series of silicon carbide (SiC) Schottky di- odes has near-zero recovery current, high surge capability, and a maximum operating junction temperature of 175 C. The diode series is ideal for applications where improve- ments in efficiency, reliability, and thermal management are desired. Features Positive temperature Extremely fast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 175 C maximum switching losses operating junction compared to Si bipolar temperature diodes Enhanced surge capability Circuit Diagram Applications 4 Case Boost diodes in power Uninterruptible power 4 factor correction supplies Switch-mode power Solar inverters supplies Industrial motor drives 132 1 2 3 Maximum Ratings Characteristics Symbol Conditions Max. (Leg / Device) Unit DC Blocking Voltage 1200 V V - R Repetitive Peak Reverse Voltage, Tj 1200 V V RRM = 25 C Maximum DC Forward Current 15 / 30 A I T = 138C F C Non-Repetitive Forward Surge 120 / 240 A I T = 25 C, 8.3 ms, half sine pulse FSM C Current T = 25 C, L = 10 mH, I = 5 A per j pk Non-Repetitive Avalanche Energy E leg, V = 100 V 132 / 264 mJ AS DD 187 / 374 T = 25 C C Power Dissipation W P Tot 46 / 92 T = 138 C C Maximum Operating Junction 175 C T J,MAX Temperature Storage Temperature -55 to 175 C T STG Soldering Temperatures, Wavesoldering Only Allowed at T 1.6 mm from case for 10s 260 C sold Leads 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/05/16SiC Schottky Diode LFUSCD30120B, 1200 V, 30 A, TO-247 3-lead Electrical Characteristics Value (Leg / Device) Characteristics Symbol Conditions Unit Min. Typ. Max. - 1.5 1.7 I = 15 A, T = 25 C F J Forward Voltage V V F - 2.5 3 I = 15 A, T = 175 C F J - 45 / 90 375 / 50 V = 1200 V , T = 25 C R J Reverse Current I A R - 90 / 180 1000 / 2000 V = 1200 V , T = 175 C R J Total Capacitive Charge - 60 / 120 - nC Q V = 600 V, I = 30 A, di/dt = 250 A/s C R F - 750 / 1500 - V = 1 V, f =1 MHz R Total Capacitance - 75 / 150 - pF C V = 300 V, f = 1 MHz R V = 600 V, f = 1 MHz - 54 / 108 - R Footnote: T = +25 C unless otherwise specified J Thermal Characteristics Value ( Leg/ Device ) Characteristics Symbol Conditions Unit Min. Typ. Max. Thermal Resistance - - 0.8 / 0.4 C/W R - JC Figure 1: Typical Reverse Characteristics Figure 2: T ypical Foward Characteristics -4 1.E-0410 30 25 -5 1.E-05 10 20 -6 1.E-0610 15 -7 - 55 C 1.E-0710 10 25 C - 55 C 100 C -8 25 C 1.E-0810 150 C 5 175 C 175 C -9 10 0 1.E-09 012345 500600 700800 900100011001200 Forward Voltage, V (V) Reverse Voltage, V (V) F R 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/05/16 Reverse Current, I (A) R Forward Current, I (A) F