GEN2 SiC Schottky Diode LSIC2SD065A16A, 650V, 16A, TO-220-2L RoHS Pb LSIC2SD065A16A 650 V, 16 A SiC Schottky Barrier Diode Description This series of silicon carbide (SiC) Schottky diodes has neg- ligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 C. These diodes series are ideal for applications where improve- ments in efficiency, reliability, and thermal management are desired. Features AEC-Q101 qualified Ex cellent surge capability Positive temperature Extremely f ast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 1 75 C maximum switching losses *Image for reference only, for details refer to Dimensions-Packag. operating junction compared to Si bipolar temperature diodes Circuit Diagram TO-220-2L Applications Case Boost diodes in PFC or Solar in verters DC/DC stages Case Industrial motor drives Switch-mode power EV c harging stations supplies Uninterruptible power supplies Environmental 12 Littelfuse RoHS logo = RoHS 12 RoHS conform Lit telfuse HF logo = Halogen Free Pb Littelfuse Pb-free logo = Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage V - 650 V RRM DC Blocking Voltage V T = 25 C 650 V R J T = 25 C 38 C Continuous Forward Current I T = 135 C 17.2 A F C T = 140 C 16 C Non-Repetitive Forward Surge Current I T = 25 C, T = 10 ms, Half sine pulse 70 A FSM C P T = 25 C 125 C Power Dissipation W P Tot T = 110 C 54 C Operating Junction Temperature -55 to 175 C T - J Storage Temperature -55 to 150 C T - STG Soldering Temperature 260 C T - SOLD 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/16/20GEN2 SiC Schottky Diode LSIC2SD065A16A, 650V, 16A, TO-220-2L Electrical Characteristics (T =25 C unless otherwise specified) J Value Characteristics Symbol Conditions Unit Min. Typ. Max. - 1.5 1.8 I = 16 A, T = 25 C F J Forward Voltage V V F - 1.85 - I = 16 A, T = 175 C F J - <1 50 V = 650 V , T = 25 C R J Reverse Current I A R - 55 - V = 650 V , T = 175 C R J - 730 - V = 1 V, f = 1 MHz R Total Capacitance - 92 - pF C V = 200 V, f = 1 MHz R - 66 - V = 400 V, f = 1 MHz R V R V R C(V)dV Total Capacitive Charge Qc = - 48 - nC Q V = 400 V, Q = C(V)dV C R c 00 Thermal Characteristics Characteristics Symbol Value Unit Thermal Resistance 1.2 C/W R JC Figure 1: T ypical Foward Characteristics Figure 2: T ypical Reverse Characteristics 16 T = 25 C J 14 12 T = 150 C J T = 125 C J 10 T = 175 C J 8 6 4 2 T = -55 C J 0 00.250.5 0.75 11.251.5 1.75 2 Voltage (V) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/16/20 Current (A)