GEN2 SiC Schottky Diode LSIC2SD065D06A, 650 V, 6 A, TO-263-2L (D2PAK) RoHS Pb LSIC2SD065D06A 650 V, 6 A SiC Schottky Barrier Diode Description This series of silicon carbide (SiC) Schottky diodes has neg- ligible reverse recovery current, high surge capability, and a SiC Schottky Diode maximum operating junction temperature of 175 C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features AEC-Q1 01 qualified Ex cellent surge capability P ositive temperature Extremely fast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 1 75 C maximum switching losses operating junction compared to Si bipolar temperature diodes Circuit Diagram TO-263-2L Applications Case Case Boost diodes in PFC or Solar inverters DC/DC stages Industrial motor drives S witch-mode power EV c harging stations supplies 12 Uninterruptible power supplies 1 2 Environmental Lit telfuse RoHS logo = RoHS RoHS conform Littelfuse HF logo = Halogen Free Littelfuse Pb-free logo = Pb Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage V - 650 V RRM DC Blocking Voltage V T = 25 C 650 V R J 18.5 T = 25 C C Continuous Forward Current I T = 135 C 8.6 A F C 6 T = 152 C C Non-Repetitive Forward Surge Current I T = 25 C, T = 10 ms, Half sine pulse 32 A FSM C P 75 T = 25 C C Power Dissipation W P Tot 32 T = 110 C C Operating Junction Temperature -55 to +175 C T - J Storage Temperature -55 to +150 C T - STG Soldering Temperature (reflow MSL 1) 260 C T - SOLD 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/21/19GEN2 SiC Schottky Diode LSIC2SD065D06A, 650 V, 6 A, TO-263-2L (D2PAK) Electrical Characteristics (T =25 C unless otherwise specified) J Value Characteristics Symbol Conditions Unit SiC Schottky Diode Min. Typ. Max. - 1.5 1.8 I = 6 A, T = 25 C F J Forward Voltage V V F - 1.85 - I = 6 A, T = 175 C F J - <1 50 V = 650 V , T = 25 C R J Reverse Current A I R - 15 - V = 650 V , T = 175 C R J V = 1 V, f = 1 MHz - 300 - R Capacitance - 39 - pF C V = 200 V, f = 1 MHz R V = 400 V, f = 1 MHz - 28 - R V R Total Capacitive Charge Q V = 400 V, C(V)dV - 20 - nC Qc = C R 0 Thermal Characteristics Characteristics Symbol Value Unit Thermal Resistance 2.0 C/W R JC Figure 1: Typical Foward Characteristics Figure 2: Typical Reverse Characteristics 6 T = 25 C J 5 T = 150 C J T = 125 C J 4 T = 175 C J 3 2 T = -55 C J 1 0 00.250.5 0.75 11.251.5 1.75 2 Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/21/19 Current (A)