GEN2 SiC Schottky Diode LSIC2SD065E16CCA, 650 V, 16 A, TO-247-3L RoHS Pb LSIC2SD065E16CCA 650 V, 16 A SiC Schottky Barrier Diode Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, SiC Schottky Diode and a maximum operating junction temperature of 175 C. This diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features AEC-Q1 01 qualified Ex cellent surge capability Positive temperature Extremely f ast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 175 C. maximum switching losses operating junction compared to Si bipolar temperature diodes Applications Circuit Diagram TO-247-3L Boost diodes in PFC or Solar inverters DC/DC stages Industrial motor driv es PIN 1 Switch-mode power EV c harging stations supplies PIN 2 CASE Uninterruptible power supplies PIN 3 Environmental Littelfuse RoHS logo = RoHS RoHS conform Littelfuse HF logo = Halogen Free 12 3 Lit telfuse Pb-free logo = Pb Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage 650 V V - RRM DC Blocking Voltage 650 V V T = 25 C R J 23 / 46 T = 25 C C Continuous Forward Current I T = 135 C 10.7 / 21.4 A F C (Per Leg/Component) 8 / 16 T = 150 C C Non-Repetitive Forward Surge Current I T = 25 C, t = 10 ms, Half sine pulse 40 A FSM C P (Per Leg) T = 25 C 88 / 176 Power Dissipation C W P Tot (Per Leg/Component) 38 / 76 T = 110 C C Operating Junction Temperature -55 to 175 C T - J Storage Temperature -55 to 150 C T - STG Soldering Temperature 260 C T - sold 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/04/19GEN2 SiC Schottky Diode LSIC2SD065E16CCA, 650 V, 16 A, TO-247-3L Electrical Characteristics (T = 25 C unless otherwise specified) J Value Characteristics Symbol Conditions Unit SiC Schottky Diode Min. Typ. Max. I = 8 A, T = 25 C - 1.5 1.8 F J Forward Voltage V V F - 1.85 - I = 8 A, T = 175 C F J - <1 50 V = 650 V, T = 25 C R J Reverse Current I A R V = 650 V, T = 175 C - 15 - R J V = 1 V, f = 1 MHz - 415 - R Total Capacitance C V = 200 V, f = 1 MHz - 56 - pF R - 41 - V = 400 V, f = 1 MHz R V R Total Capacitive Charge C(V)dV - 29 - nC Q V = 400 V, Qc = C R 0 Thermal Characteristics Characteristics Symbol Value Unit Thermal Resistance (Per Leg/Component) 1.7 / 0.85 C/W R JC Figure 1: T ypical Foward Characteristics Figure 2: Typical Reverse Characteristics 8 7 T = -55 C J T = 25C J 6 T = 125 C J T = 150 C J 5 T = 175 C J 4 3 2 1 0 00.250.5 0.75 11.251.5 1.75 2 Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/04/19 Current (A)