GEN2 SiC Schottky Diode LSIC2SD065E40CCA, 650 V, 40 A, TO-247-3L RoHS Pb LSIC2SD065E40CCA 650 V, 40 A SiC Schottky Barrier Diode Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and SiC Schottky Diode a maximum operating junction temperature of 175 C. This diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features AEC-Q1 01 qualified Excellent surge capability P ositive temperature Extremely f ast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 175 C. maximum switching losses operating junction compared to Si bipolar temperature diodes Applications Circuit Diagram TO-247-3L Boost diodes in PFC or Solar inverters DC/DC stages Industrial motor drives PIN 1 S witch-mode power EV charging stations supplies PIN 2 CASE Uninter ruptible power supplies PIN 3 Environmental Littelfuse RoHS logo = RoHS RoHS conform Littelfuse HF logo = Halogen Free 12 3 Littelfuse Pb-free logo = Pb Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage 650 V V - RRM DC Blocking Voltage 650 V V T = 25 C R J 45 / 90 T = 25 C Continuous Forward Current C A I F (Per Leg/Component) T = 135 C 20 / 40 C Non-Repetitive Forward Surge Current 90 A I T = 25 C, T = 10 ms, Half sine pulse FSM C P (Per Leg) 135 / 270 T = 25 C Power Dissipation C P W Tot (Per Leg/Component) T = 110 C 60 / 120 C Operating Junction Temperature -55 to 175 C T - J Storage Temperature -55 to 150 C T - STG Soldering Temperature 260 C T - sold 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/05/19GEN2 SiC Schottky Diode LSIC2SD065E40CCA, 650 V, 40 A, TO-247-3L Electrical Characteristics (T = 25 C unless otherwise specified) J Value Characteristics Symbol Conditions Unit SiC Schottky Diode Min. Typ. Max. I = 20 A, T = 25 C - 1.5 1.8 F J Forward Voltage V V F - 1.85 - I = 20 A, T = 175 C F J - <1 50 V = 650 V, T = 25 C R J Reverse Current I A R V = 650 V, T = 175 C - 60 - R J V = 1 V, f = 1 MHz - 960 - R Total Capacitance C V = 200 V, f = 1 MHz - 120 - pF R - 86 - V = 400 V, f = 1 MHz R V R Total Capacitive Charge C(V)dV - 63 - nC Q V = 400 V, Qc = C R 0 Thermal Characteristics Characteristics Symbol Value Unit Thermal Resistance (Per Leg/Component) R 1.10 / 0.55 C/W JC Figure 1: Typical Foward Characteristics Figure 2: Typical Reverse Characteristics 20 18 T = -55 C J T = 25C 16 J T = 125 C J 14 T = 150 C J T = 175 C J 12 10 8 6 4 2 0 00.250.5 0.75 11.251.5 1.75 2 Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/05/19 Current (A)