GEN2 SiC Schottky Diode LSIC2SD120A20, 1200 V, 20 A, TO-220-2L RoHS Pb LSIC2SD120A20 Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 C. These diodes are ideal for applications where improve- ments in efficiency, reliability, and thermal management are desired. Features Positive temperature Extremely f ast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 175 C maximum switching losses operating junction compared to Si bipolar temperature diodes Ex cellent surge capability Circuit Diagram TO-220-2L Applications Boost diodes in PFC or Solar inverters Case Case DC/DC stages Industrial motor drives Switch-mode power EV c harging stations supplies Uninterruptible power supplies 12 Environmental RoHS Littelfuse RoHS logo = RoHS conform 1 2 Littelfuse HF logo = Halogen Free Pb Lit telfuse PB-free logo = Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage V - 1200 V RRM DC Blocking Voltage V T = 25 C 1200 V R J T = 25 C 54.5 C Continuous Forward Current I T = 135 C 26.0 A F C T = 150 C 20.0 C Non-Repetitive Forward Surge Current I T = 25 C, T = 10 ms, Half sine pulse 140 A FSM C P T = 25 C 250 C Power Dissipation P W Tot T = 110 C 108 C Operating Junction Temperature T - -55 to 175 C J Storage Temperature T - -55 to 150 C STG Soldering Temperature T - 260 C sold 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/16/20GEN2 SiC Schottky Diode LSIC2SD120A20, 1200 V, 20 A, TO-220-2L Electrical Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. I = 20 A, T = 25 C - 1.5 1.8 F J Forward Voltage V V F I = 20 A, T = 175 C - 2.2 - F J V = 1200 V , T = 25 C - <1 100 R J Reverse Current I A R V = 1200 V , T = 175 C - 15 R J V = 1 V, f =1 MHz - 1142 - R Total Capacitance C V = 400 V, f = 1 MHz - 108 - pF R V = 800 V, f = 1 MHz - 82 - R V R Total Capacitive Charge Q V = 800 V, Q = C(V)dV - 115 - nC C R c 0 Footnote: T = +25 C unless otherwise specified J Thermal Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. Thermal Resistance - 0.6 - C/W R - JC Figure 1: T ypical Foward Characteristics Figure 2: Typical Reverse Characteristics 1E- 4 40 35 T = -55C 1E- 5 J T = 25C J 30 T = 125C J T = 150C J 25 T = 175 C T = 175C J J 1E- 6 20 15 T = 150 C J 1E- 7 10 T = 125 C J 5 T = 25 C J 1E- 8 0 02 00 40 06 00 80 01 00 01 20 0 -0.5 0.51.5 2.53.5 4.5 Reverse Voltage, V (V) R Forward Voltage (V) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/16/20 Forward Current (A) Reverse Current, I (A) R