GEN2 SiC Schottky Diode LSIC2SD120C05, 1200 V, 5 A, TO-252-2L (DPAK) RoHS Pb LSIC2SD120C05 Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 C. These diodes series are ideal for applications where im- provements in efficiency, reliability, and thermal manage- ment are desired. Features P ositive temperature Extremely f ast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 175 C maximum switching losses operating junction compared to Si bipolar temperature diodes Excellent surge capability Circuit Diagram TO-252-2L ( DPAK ) Applications Boost diodes in PFC or Solar in verters Case DC/DC stages Industrial motor driv es Switch-mode power EV charging stations supplies Uninter ruptible power supplies Environmental Pin 2 Pin 1 1 2 RoHS Littelfuse RoHS logo = RoHS conform Lit telfuse HF logo = Halogen Free Pb Littelfuse PB-free logo = PB--free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage 1200 V V - RRM DC Blocking Voltage 1200 V V T = 25 C R j 18.1 T = 25 C C Continuous Forward Current 8.7 A I T = 135 C F C T = 159 C 5 C Non-Repetitive Forward Surge Current 40 A I T = 25 C, T = 10 ms, Half sine pulse FSM C P 100 T = 25 C C Power Dissipation P W Tot 43.3 T = 110 C C Operating Junction Temperature T - -55 to 175 C J Storage Temperature T - -55 to 150 C STG Soldering Temperature (reflow MSL 1) T - 260 C sold 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/02/17GEN2 SiC Schottky Diode LSIC2SD120C05, 1200 V, 5 A, TO-252-2L (DPAK) Electrical Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. - 1.5 1.8 I = 5 A, T = 25 C F J Forward Voltage V V F - 2.1 I = 5 A, T = 175 C F J - <1 100 V = 1200 V , T = 25 C R J Reverse Current I A R - 5 V = 1200 V , T = 175 C R J - 310 V = 1 V, f =1 MHz R Total Capacitance - 29 pF C V = 400 V, f = 1 MHz R V = 800 V, f = 1 MHz - 21 R V R Total Capacitive Charge Q V = 800 V, C(V)dV - 30 nC Qc = C R 0 Footnote: T = +25 C unless otherwise specified J Thermal Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. Thermal Resistance - 1.50 C/W R - JC Figure 1: T ypical Foward Characteristics Figure 2: Typical Reverse Characteristics 10 1E-4 T = -55 C J 9 T = 25 C J T = 125 C J 8 T = 150 C J 1E -5 T = 175 C 7 J 6 5 1E -6 T = 175 C J 4 T = 150 C 3 J 1E -7 T = 125 C J 2 T = 25 C J 1 1E -8 0 0200 400600 80010001200 00.5 11.5 22.5 33.5 44.5 Reverse Voltage, V (V) R Forward Voltage (V) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/02/17 Forward Current (A) Reverse Current, I (A) R