GEN2 SiC Schottky Diode LSIC2SD120D10, 1200 V, 10 A, TO-263-2L RoHS Pb LSIC2SD120D10 Series Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 C. This diode series is ideal for applications where im- provements in efficiency, reliability, and thermal manage - ment are desired. Features Positive temperature Extremely f ast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 175 C maximum switching losses operating junction compared to Si bipolar temperature diodes Ex cellent surge capability Circuit Diagram TO-263-2L Applications Case Case B oost diodes in PFC or Solar in verters DC/DC stages Industrial motor driv es Switch-mode power EV c harging stations supplies 12 Uninter ruptible power supplies 1 2 Environmental RoHS Lit telfuse RoHS logo = RoHS conform Lit telfuse HF logo = Halogen Free Pb Littelfuse Pb-free logo = Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage V - 1200 V RRM DC Blocking Voltage V T = 25 C 1200 V R j T = 25 C 28 C Continuous Forward Current I T = 125 C 15 A F C T = 151 C 10 C Non-Repetitive Forward Surge Current I T = 25 C, T = 10 ms, Half sine pulse 80 A FSM C P T = 25 C 136 C Power Dissipation P W Tot T = 110 C 59 C Operating Junction Temperature T - -55 to 175 C J Storage Temperature T - -55 to 150 C STG Soldering Temperature (reflow MSL1) T - 260 C sold 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/16/20GEN2 SiC Schottky Diode LSIC2SD120D10, 1200 V, 10 A, TO-263-2L Electrical Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. I = 10 A, T = 25 C - 1.5 1.8 F J Forward Voltage V V F I = 10 A, T = 175 C - 2.2 F J V = 1200 V , T = 25 C - <1 100 R J Reverse Current I A R V = 1200 V , T = 175 C - 10 R J V = 1 V, f =1 MHz - 582 R Total Capacitance C V = 400 V, f = 1 MHz - 53 pF R V = 800 V, f = 1 MHz - 40 R V R Total Capacitive Charge Q V = 800 V, Q = C(V)dV - 57 nC C R c 0 Footnote: T = +25 C unless otherwise specified J Thermal Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. Thermal Resistance - 1.1 C/W R - JC Figure 1: T ypical Foward Characteristics Figure 2: Typical Reverse Characteristics 20 -4 18 T = -55C J T = 25 C J 16 T = 125C J 1E -5 T = 150C J 14 T = 175C J 12 1E -6 T = 175 C J 10 8 T = 150 C J 6 1E -7 T = 125 C J 4 T = 25 C J 2 1E -8 0 0200 400 600 80010001200 -0.5 0.51.5 2.53.5 4.5 Reverse Voltage, V (V) R Forward Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/16/20 1E Forward Current (A) Reverse Current, I (A) R