GEN2 SiC Schottky Diode LSIC2SD120D15, 1200 V, 15 A, TO-263-2L RoHS Pb LSIC2SD120D15 Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 C. This diode series is ideal for applications where improve- ments in efficiency, reliability, and thermal management are desired. Features P ositive temperature Extremely f ast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 1 75 C maximum switching losses operating junction compared to Si bipolar temperature diodes Ex cellent surge capability Circuit Diagram TO-263-2L Applications B oost diodes in PFC or Solar in verters Case Case DC/DC stages Industrial motor driv es S witch-mode power EV charging stations supplies Uninterruptible power 12 supplies 1 2 Environmental RoHS Littelfuse RoHS logo = RoHS conform Lit telfuse HF logo = Halogen Free Pb Lit telfuse Pb-free logo = Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage V - 1200 V RRM DC Blocking Voltage V T = 25 C 1200 V R J T = 25 C 44 C Continuous Forward Current I T = 135 C 21 A F C T = 150 C 15 C Non-Repetitive Forward Surge Current I T = 25 C, T = 10 ms, Half sine pulse 120 A FSM C P T = 25 C 214 C Power Dissipation P W Tot T = 110 C 93 C Operating Junction Temperature T - -55 to 175 C J Storage Temperature T - -55 to 150 C STG Soldering Temperature (reflow MSL1) T - 260 C sold 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/16/20GEN2 SiC Schottky Diode LSIC2SD120D15, 1200 V, 15 A, TO-263-2L Electrical Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. I = 15 A, T = 25 C - 1.5 1.8 F J Forward Voltage V V F I = 15 A, T = 175 C - 2.2 F J V = 1200 V , T = 25 C - <1 100 R J Reverse Current I A R V = 1200 V , T = 175 C - 10 R J V = 1 V, f =1 MHz - 920 R Total Capacitance C V = 400 V, f = 1 MHz - 88 pF R V = 800 V, f = 1 MHz - 64 R V R Total Capacitive Charge Q V = 800 V, Q = C(V)dV - 92 nC C R c 0 Footnote: T = +25 C unless otherwise specified J Thermal Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. Thermal Resistance - 0.7 - C/W R - JC Figure 1: Typical Foward Characteristics Figure 2: Typical Reverse Characteristics 1E-4 30 T = - 55C J 25 T = 25C J T = 125C 1E-5 J T = 150C J 20 T = 175C J 1E-6 15 T = 175 C J 10 1E-7 T = 150 C J 5 T = 125 C J T = 25 C J 1E-8 0 -0.5 0.51.5 2.53.5 4.5 0200 400600 80010001200 Forward Voltage (V) Reverse Voltage, V (V) R 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/16/20 Forward Current (A) Reverse Current, I (A) R