MAC30308
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever fullwave silicon gate controlled solidstate devices are
needed. Triac type thyristors switch from a blocking to a conducting
MAC30308
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance JunctiontoCase R 2.0 C/W
JC
R 62.5
JunctiontoAmbient
JA
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C
L
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted; Electricals apply in both directions)
C
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current I ,
DRM
(V = Rated V , V ; Gate Open) T = 25C I 10
A
D DRM RRM J RRM
T = +125C 2.0 mA
J
ON CHARACTERISTICS
Peak On-State Voltage V 1.2 1.65 V
TM
(I = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%)
TM
Gate Trigger Current (Continuous dc) I mA
GT
(Main Terminal Voltage = 12 Vdc, R = 100 Ohms)
L
MT2(+), G(+) 12 50
MT2(+), G() 12 50
MT2(), G() 20 50
MT2(), G(+) 35 75
Gate Trigger Voltage (Continuous dc) V V
GT
(Main Terminal Voltage = 12 Vdc, R = 100 )
L
0.9 2.0
MT2(+), G(+)
0.9 2.0
MT2(+), G()
1.1 2.0
MT2(), G()
MT2(), G(+) 1.4 2.5
Gate NonTrigger Voltage (Continuous dc) V 0.2 V
GD
(Main Terminal Voltage = 12 V, R = 100 , T = +125C) All Four Quadrants
L J
Holding Current I 6.0 50 mA
H
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA, T = +25C)
C
Turn-On Time t 1.5 s
gt
(Rated V , I = 11 A)
DRM TM
(I = 120 mA, Rise Time = 0.1 s, Pulse Width = 2 s)
GT
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage dv/dt(c) 5.0 V/s
(V = Rated V , I = 14 A, Commutating di/dt = 5.0 A/ms,
D DRM TM
Gate Unenergized, T = 70C)
C
Critical Rate of Rise of Off-State Voltage dv/dt 100 V/s
(V = Rated V , Exponential Voltage Rise,
D DRM
Gate Open, T = +70C)
C