Power Module 600V IGBT Family RoHS MG06400D-BN4MM Series 400A Dual IGBT Features High short circuit F ree wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery V with positive Low switching losses CE(sat) temperature coefficient F ast switching and short tail current Applications Motor drives SMPS and UPS Agency Approvals Inverter Welder AGENCY AGENCY FILE NUMBER Converter Induction Heating E71639 Module Characteristics (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 175 C J max) T Operating Temperature -40 150 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol Module case exposed to 0.1% ammonium CTI Comparative Tracking Index 350 V chloride solution per UL and IEC standards Torque Module-to-Sink Recommended (M6) 3 5 Nm Torque Module Electrodes Recommended (M6) 2.5 5 Nm Weight 320 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 600 V CES J V Gate - Emitter Voltage 20 V GES T =25C 500 A C I DC Collector Current C T =70C 400 A C I Repetitive Peak Collector Current t =1ms 800 A CM p P Power Dissipation Per IGBT 1250 W tot Diode V Repetitive Reverse Voltage T=25C 600 V RRM J T =25C 500 A C I Average Forward Current F(AV) T =70C 400 A C I Repetitive Peak Forward Current t =1ms 800 A FRM p 2 2 I t T =125C, t=10ms, V =0V 10000 A s J R Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 1 2016 Littelfuse, Inc MG06400D-BN4MM Specifications are subject to change without notice. Revised:07/21/16Power Module 600V IGBT Family Electrical and Thermal Specifications (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =6.4mA 4.9 5.8 6.5 V GE(th) CE GE C I =400A, V =15V, T=25C 1.45 V Collector - Emitter C GE J V CE(sat) Saturation Voltage I =400A, V =15V, T=125C 1.6 V C GE J V =600V, V =0V, T=25C 1.0 mA CE GE J I Collector Leakage Current CES V =600V, V =0V, T=125C 5 mA CE GE J I Gate Leakage Current V =0V,V =15V, T=125C -400 400 A GES CE GE J R Intergrated Gate Resistor 1.0 Gint Q Gate Charge V =300V, I =400A , V =15V 4.3 C ge CE C GE C Input Capacitance 26 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 0.76 nF res T =25C 110 ns J t Turn - on Delay Time d(on) T =125C 120 ns J T =25C 50 ns J V =300V t Rise Time CC r T =125C 60 ns J I =400A T =25C 490 ns C J t Turn - off Delay Time d(off) T =125C 520 ns J R =1.5 G T =25C 60 ns J t Fall Time f T =125C 70 ns V =15V J GE T =25C 2.1 mJ J E Turn - on Energy Inductive Load on T =125C 3.2 mJ J T =25C 12 mJ J E Turn - off Energy off T =125C 15 mJ J t 6S , V =15V psc GE I Short Circuit Current 2000 A SC T =125C,V =360V J CC Junction-to-Case Thermal R 0.12 K/W thJC Resistance (Per IGBT) Diode I =400A , V =0V, T =25C 1.55 V F GE J V Forward Voltage F I =400A , V =0V, T =125C 1.50 V F GE J I Max. Reverse Recovery Current I =400A , V =300V 330 A RRM F R Q Reverse Recovery Charge d /dt=-7000A/s 29.0 C rr iF E Reverse Recovery Energy T=125C 7.4 mJ rec J Junction-to-Case Thermal R 0.22 K/W thJCD Resistance (Per Diode) 2 2016 Littelfuse, Inc MG06400D-BN4MM Specifications are subject to change without notice. Revised:07/21/16