Power Module 1700V 50A IGBT Module RoHS MG1750S-BN4MM Features 3 IGBT CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology) technology) Free wheeling diodes L ow turn-off losses, short with fast and soft reverse tail current recovery V with positive CE(sat) temperature coefficient Applications Agency Approvals High frequency switc hing Motion/servo control application UPS systems AGENCY AGENCY FILE NUMBER Medical applications E71639 Module Characteristics (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 150 C J max) T Operating Temperature -40 125 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 4000 V isol CTI Comparative Tracking Index 350 Torque Module-to-Sink Recommended (M6) 3 5 Nm Torque Module Electrodes Recommended (M5) 2.5 5 Nm Weight 160 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 1700 V CES J V Gate - Emitter Voltage 20 V GES T =25C 75 A C I DC Collector Current C T =80C 50 A C I Repetitive Peak Collector Current t =1ms 100 A CM P P Power Dissipation Per IGBT 320 W tot Diode V Repetitive Reverse Voltage T =25C 1700 V RRM J T =25C 75 A C I Average Forward Current F(AV) T =80C 50 A C I Repetitive Peak Forward Current t =1ms 100 A FRM P 2 2 I t T =125C, t=10ms, V =0V 420 A S J R Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG1750S-BN4MM 2015 Littelfuse, Inc 1 289 Specifications are subject to change without notice. Revised:05/19/15Power Module 1700V 50A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =2.0mA 5.2 5.8 6.4 V GE(th) CE GE C I =50A, V =15V, T =25C 2.0 2.45 V Collector - Emitter C GE J V CE(sat) Saturation Voltage I =50A, V =15V, T =125C 2.4 V C GE J V =1700V, V =0V, T =25C 3 mA CE GE J I Collector Leakage Current CES V =1700V, V =0V, T =125C 20 mA CE GE J I Gate Leakage Current V =0V,V =20V, T =125C -400 400 nA GES CE GE J R Intergrated Gate Resistor 9.5 Gint Q Gate Charge V =900V, I =50A , V =15V 0.6 C ge CE C GE C Input Capacitance 4.5 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 0.15 nF res T =25C 370 ns J t Turn - on Delay Time d(on) T =125C 400 ns J T =25C 40 ns J V =900V t Rise Time CC r T =125C 50 ns J I =50A T =25C 650 ns C J t Turn - off Delay Time d(off) T =125C 800 ns J R =8 G T =25C 180 ns J t Fall Time f T =125C 300 ns V =15V J GE T =25C 11 mJ J E Turn - on Energy Inductive Load on T =125C 16 mJ J T =25C 10.5 mJ J E Turn - off Energy off T =125C 15.5 mJ J I Short Circuit Current t 10S , V =15V T =125C,V =1000V 200 A SC psc GE J CC R Junction-to-Case Thermal Resistance (Per IGBT) 0.38 K/W thJC Diode I =50A , V =0V, T =25C 1.8 2.2 V F GE J V Forward Voltage F I =50A , V =0V, T =125C 1.9 V F GE J I Max. Reverse Recovery Current I =50A , V =900V 84 A RRM F R Q Reverse Recovery Charge di /dt=-1200A/s 25 C rr F E Reverse Recovery Energy T =125C 13.5 mJ rec J R Junction-to-Case Thermal Resistance (Per Diode) 0.55 K/W thJCD MG1750S-BN4MM 2015 Littelfuse, Inc 2 290 Specifications are subject to change without notice. Revised:05/19/15