Z0103MN, Z0107MN, Z0109MN Sensitive Gate Triac Series Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and Z0103MN, Z0107MN, Z0109MN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current T = 25C I , I 5.0 A J DRM RRM (V = Rated V , V Gate Open) T = +125C 500 A D DRM RRM J ON CHARACTERISTICS Peak On State Voltage V 1.56 V TM (I = 1.4 A Peak Pulse Width 2.0 ms, Duty Cycle 2.0%) TM Gate Trigger Current (Continuous dc) Z0103MN I mA GT (V = 12 Vdc, R = 30 Ohms) D L MT2(+), G(+) 0.15 3.0 MT2(+), G() 0.15 3.0 MT2(), G() 0.15 3.0 MT2(), G(+) 0.25 5.0 Gate Trigger Current (Continuous dc) Z0107MN I mA GT (V = 12 Vdc, R = 30 Ohms) D L MT2(+), G(+) 0.15 5.0 MT2(+), G() 0.15 5.0 MT2(), G() 0.15 5.0 MT2(), G(+) 0.25 7.0 Gate Trigger Current (Continuous dc) Z0109MN I mA GT (V = 12 Vdc, R = 30 Ohms) D L MT2(+), G(+) 0.15 10 MT2(+), G() 0.15 10 MT2(), G() 0.15 10 MT2(), G(+) 0.25 10 Latching Current (V = 12 V, I = 1.2 x I ) Z0103MN I mA D G GT L MT2(+), G(+) All Types 7.0 MT2(+), G() All Types 15 MT2(), G() All Types 7.0 MT2(), G(+) All Types 7.0 Latching Current (V = 12 V, I = 1.2 x I ) Z0107MN I mA D G GT L MT2(+), G(+) All Types 10 MT2(+), G() All Types 20 MT2(), G() All Types 10 MT2(), G(+) All Types 10 Latching Current (V = 12 V, I = 1.2 x I ) Z0109MN I mA D G GT L MT2(+), G(+) All Types 15 MT2(+), G() All Types 25 MT2(), G() All Types 15 MT2(), G(+) All Types 15 Gate Trigger Voltage (Continuous dc) (V = 12 Vdc, R = 30 Ohms) V 1.3 V D L GT Gate NonTrigger Voltage (V = 12 V, R = 30 Ohms, T = 125C) V 0.2 V D L J GD All Four Quadrants Holding Current (Z0103MA) I 7.0 mA H (V = 12 Vdc, Initiating Current = 50 mA, Gate Open) (Z0107MA, Z0109MA) 10 D DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current di/dt(c) 1.6 A/ms (V = 400 V, I = 0.84 A, Commutating dv/dt = 1.5 V/ s, Gate Open, D TM T = 110C, f = 250 Hz, with Snubber) J Critical Rate of Rise of OffState Voltage (V = 67% Rated V , Exponential dv/dt V/ s D DRM Waveform, Gate Open, T = 110C) Z0103MN 10 30 J Z0107MN 20 60 Z0109MN 50 75 Repetitive Critical Rate of Rise of On State Current, T = 125C di/dt 20 A/ s J Pulse Width = 20 s, IPKmax = 15 A, diG/dt = 1 A/ s, f = 60 Hz