Product Information

MA4AGSW1A

Product Image X-ON

Datasheet
RF Switch ICs .05-50GHz SPST AlGaAs IL .5dB

Manufacturer: MACOM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

25: USD 17.0452 ea
Line Total: USD 426.13

0 - Global Stock
MOQ: 25  Multiples: 25
Pack Size: 25
Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 19 Jun to Wed. 21 Jun

MOQ : 125
Multiples : 125

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MA4AGSW1A
MACOM

125 : USD 25.26
300 : USD 25.2
500 : USD 24.372

0 - Global Stock


Ships to you between Tue. 13 Jun to Mon. 19 Jun

MOQ : 4
Multiples : 1

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MA4AGSW1A
MACOM

4 : USD 20.8817

0 - Global Stock


Ships to you between Tue. 13 Jun to Mon. 19 Jun

MOQ : 25
Multiples : 25

Stock Image

MA4AGSW1A
MACOM

25 : USD 17.0452

     
Manufacturer
MACOM
Product Category
RF Switch ICs
RoHS - XON
Y Icon ROHS
Number of Switches
Single
Switch Configuration
Spst
Frequency
50 MHz to 70 GHz
Insertion Loss
1.2 Db
Off Isolation - Typ
30 Db
Maximum Operating Temperature
+ 125 C
Package / Case
DIE
Operating Frequency
50 MHz to 70 GHz
Minimum Operating Temperature
- 55 C
Supply Current
10 mA
Brand
Macom
Factory Pack Quantity :
25
Cnhts
8542319000
Hts Code
8542390001
Mxhts
85423901
Operating Supply Current
10 mA
Product Type
Rf Switch Ics
Subcategory
Wireless & Rf Integrated Circuits
Taric
8542399000
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MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch Rev. V7 Features Ultra Broad Bandwidth : 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.5 dB Insertion Loss at 50 GHz 46 dB Isolation at 50 GHz Low Current consumption: -5 V low loss state +10 mA Isolation state Silicon Nitride Passivation Polymer Scratch protection RoHS Compliant* Description Yellow areas indicate bond pads The MA4AGSW1A is an Aluminum-Gallium- Arsenide, single pole, single throw (SPST), absorptive PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using MACOMs patented hetero-junction technology. This technology produces a switch with less loss than conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. Off chip bias circuitry is required. Applications The output port of this device, J2, is terminated into 50 during isolation mode, which allows this signal to be absorbed rather than reflected back. This Ordering Information functionality makes it ideal for instrumentation and Part Number Package radar applications. An absorptive switch can be added to other AlGaAs reflective switches to MA4AGSW1A Waffle Pack improve isolation VSWR and increase isolation magnitude. The ultra low capacitance of the PIN diodes makes it ideal for usage in low loss and high isolation microwave and millimeter wave switch designs through 70 GHz. The lower series resistance of the AlGaAs diodes reduces the total insertion loss and distortion of the device. AlGaAs PIN switches are used in applications such as * Restrictions on Hazardous Substances, switching arrays for radar systems, radiometers, and European Union Directive 2011/65/EU. other multi-function components. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch Rev. V7 Electrical Specifications: T = +25C (on wafer measurements) A Parameter Test Conditions Units Min. Typ. Max. Insertion Loss (J1 - J2) -5 V J1 and B, 50 GHz dB 1.2 Isolation (J1 - J2 (terminated by 50 )) 10 ma J1 and B, 50 GHz dB 30 Input Return Loss (J1 - J2) -5 V J1 and B, 50 GHz dB 15 Output Return Loss (J2 - J1) -5 V J1 and B, 50 GHz dB 18 Isolation (J2 (terminated by 50 )) 10 ma J1 and B, 50 GHz dB 18 Switching Speed (J1 - J2) 5 V PIN TTL Driver ns 10 (10% -90% RF Voltage) 1 MHz Repetition Frequency, 10 GHz 1. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 - 560 pF and a resistor between 150 - 220 Ohms to achieve 10 ns rise and fall times. 2. Bias nodes, J1 and B may be connected together 3,4 Absolute Maximum Ratings Parameter Absolute Maximum Handling Procedures CW RF Incident Power 23 dBm Please observe the following precautions to avoid Breakdown Voltage 25 V damage: Bias Current 25 mA Static Sensitivity 7,8 Junction Temperature +150C These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged Operating Temperature -55C to +125C by static electricity. Proper ESD control techniques Storage Temperature -55C to +150C should be used when handling these devices. 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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