MA4E2501L-1290 SURMOUNT Low Barrier Rev. V2 0201 Silicon Schottky Diode Features The MA4E2501L-1290 SURMOUNT Low Barrier Extremely Low Parasitic Capacitance and Induc- Schottky diode is recommended for use in microwave tance. circuits through Ku band frequencies for lower power Extremely Small 0201 (600x300um) Footprint applications such as mixers, sub-harmonic mixers, detec- Surface Mountable in Microwave Circuits. No tors and limiters Wire bonds Required. Rugged HMIC Construction with Polyimide A Scratch Protection Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300C, 16 hours) Available in Pocket Tape and Reel B Description and Applications The MA4E2501L-1290 SURMOUNT Diodes are Silicon Low Barrier Schottky Devices fabricated with the pat- ented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which C form diodes or via conductors embedded in a glass dielec- tric, which acts as the low dispersion, microstrip transmis- sion medium. The combination of silicon and glass allows D E F HMIC devices to have excellent loss and power dissipa- tion characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead de- G vice coupled with the superior mechanical performance of a chip. The SURMOUNT structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. Cathode Anode The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum Chip Dimensions diffusion barrier, which permits all devices to be sub- jected to a 16-hour non-operating stabilization bake at dim. in mm 300C. min. max. min. max. A 0.023 0.025 0.575 0.625 The extremely small 0201 outline allows for Surface B 0.011 0.013 0.275 0.325 Mount placement and multi-functional polarity orienta- C 0.004 0.008 0.102 0.203 tions. D 0.006 0.008 0.150 0.200 E 0.007 0.009 0.175 0.225 F 0.006 0.008 0.150 0.200 G 0.009 0.011 0.220 0.270 1 North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, India Tel: +91.80.43537383 China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. to the product(s) or information contained herein without notice. MA4E2501L-1290 SURMOUNT Low Barrier Rev. V2 0201 Silicon Schottky Diode Electrical Specifications + 25 C Parameters and Test Conditions Symbol Units Min. Typ. Max. Total Capacitance at 0V at 1 MHz Ct pF 0.10 0.12 Dynamic Resistance at 9.5 - 10.5mA Rd Ohms 10 14 Forward Voltage at +1mA Vf Volts .300 .330 Reverse Breakdown Voltage at -10uA Vb Volts 3.0 5 1 Absolute Maximum Ratings Parameter Absolute Maximum Operating Temperature -40 C to +150 C Storage Temperature -40 C to +150 C Forward Current 20 mA Reverse Voltage 5 volts. RF CW Incident Power + 20 dBm RF+DC Dissipated Power 50 mW 2 Class 0 Electrostatic Discharge ( ESD ) Classification 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Human Body Model Ordering Information Part Number Package Standard Quantity MA4E2501L-1290 Die in Carrier 100 MADS-002501-1290LP Pocket Tape and Reel 3000 2 North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, India Tel: +91.80.43537383 China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. to the product(s) or information contained herein without notice.