MAAL-011111-000SMB

MAAL-011111 Low Noise Amplifier Rev. V3 22 - 38 GHz Features Functional Block Diagram 19 dB Small Signal Gain 2.5 dB Noise Figure N/C N/C N/C V D Single 3.3 V Bias Lead-Free 3 mm 16-Lead PQFN Package 16 15 14 13 100% RF Tested * RoHS Compliant GND 12 GND 1 Description 2 11 RF RF OUT IN The MAAL-011111 is a three stage 22 - 38 GHz GND 3 10 GND GaAs MMIC low noise amplifier. This device has a small signal gain of 19 dB with a noise figure of 2.5 N/C N/C 4 9 dB. This lead-free, 3 mm QFN package requires only a 7 8 5 6 single positive bias supply. The devices uses MACOMs GaAs transistor technology, ensuring high N/C N/C N/C N/C repeatability and uniformity. The device is well suited to multiple receiver Pin Configuration applications which require broadband performance with simple bias requirements and the ease of Pin Pin Name Description volume manufacturing with 3 mm QFN packaging. 1 GND Ground 2 RF RF Input 1,2 IN Ordering Information 3 GND Ground Part Number Package 4-9 N/C No Connection MAAL-011111-TR0500 500 pc reel 10 GND Ground MAAL-011111-TR1000 1K pc reel 11 RF RF Output OUT MAAL-011111-000SMB Sample Evaluation board 12 GND Ground 1. Reference Application Note M513 for reel size information. 2. All sample boards include 5 loose parts. 13 V Bias Voltage D 14-16 N/C No Connection 3 Paddle RF and DC Ground 3. The exposed pad centered on the package bottom must be connected to RF and DC ground. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAL-011111 Low Noise Amplifier Rev. V3 22 - 38 GHz Electrical Specifications: Freq: 22 - 38 GHz, V = 3.3 V, T = +25C D A Parameter Units Min. Typ. Max. 4 Small Signal Gain dB 17 19 Gain Flatness dB 2 Input Return Loss dB 10 Output Return Loss dB 13 Reverse isolation dB 45 Noise Figure dB 2.5 Output P1dB dBm 5 Supply Current (I ) mA 55 65 D 4. Specified over 24-36 GHz 5,6 Absolute Maximum Ratings Handling Procedures Please observe the following precautions to avoid Parameter Absolute Maximum damage: Supply Voltage 7 VDC Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to Supply Current 70 mA electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques Input Power 12.0 dBm should be used when handling these Class 1A devices. Storage Temperature -65C to +165C Operating Temperature -40C to +85C 7 Channel Temperature +150C 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. MACOM does not recommend sustained operation near these survivability limits. 7. Channel temperature directly affects a device s MTTF. It is recommended to keep channel temperature as low as possible to maximize lifetime. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: