MAAM-010239 Low Noise FTTx Amplifier Rev. V1 50 - 1000 MHz Features Functional Schematic Low Distortion RF N/C N/C N/C N/C IN Low Noise Figure Lead-Free 4 mm 20-Lead PQFN Package 20 Halogen-Free Green Mold Compound OUT N/C 1 15 260C Reflow Compatible STG1 N/C N/C Description The MAAM-010239 is a GaAs pHEMT MMIC N/C N/C amplifier in a lead-free 4mm 20-lead PQFN N/C N/C package. The amplifier is designed to meet the high gain, high linearity and low noise requirements of IN 5 RF 11 FTTx receivers. OUT STG2 N/C N/C N/C N/C N/C 1,2 Ordering Information Part Number Package Pin Configuration MAAM-010239-TR1000 1000 piece reel Pin No. Pin Name Description MAAM-010239-TR3000 3000 piece reel 1 N/C No Connection 2 N/C No Connection MAAM-010239-001SMB Sample Test Board 3 N/C No Connection 1. Reference Application Note M513 for reel size information. 4 N/C No Connection 2. All sample boards include 5 loose parts. 5 RF RF Output OUT 6 N/C No Connection 3,4,5 Absolute Maximum Ratings 7 N/C No Connection 8 N/C No Connection Parameter Absolute Maximum 9 N/C No Connection Max Input Power -5 dBm 10 N/C No Connection Operating Voltage +10.0 V 11 IN STG2 STAGE 2 RF Input Operating Temperature -20C to +85C 12 N/C No Connection 6 13 N/C No Connection Junction Temperature +150C 14 N/C No Connection Storage Temperature -65C to +150C 15 OUT STG1 STAGE 1 RF Output 3. Exceeding any one or combination of these limits may cause 16 N/C No Connection permanent damage to this device. 4. M/A-COM Technology Solutions does not recommend 17 N/C No Connection sustained operation near these survivability limits. 6 18 N/C No Connection 5. These operating conditions will ensure MTTF > 1 x 10 hours. 6. Junction Temperature (T ) = T + jc * (V * I) 19 N/C No Connection J A Typical thermal resistance ( jc) = 51 C/W. 20 RF RF Input IN a) For T = 25C, A 7 21 Paddle RF and DC Ground T = 80 C 5.0 V, 215 mA J b) For T = 85C, A 7. The exposed pad centered on the package bottom must be connected to RF and DC ground. T = 140 C 5.0 V, 215 mA J * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAM-010239 Low Noise FTTx Amplifier Rev. V1 50 - 1000 MHz Electrical Specifications: T = 25C, Freq: 50 - 1000 MHz, V = +5 Volts, Z = 75 A DD 0 Parameter Test Conditions Units Min. Typ. Max. RF to RF IN OUT Gain 51 MHz dB 29 30 31 1 GHz 29.5 30.5 31.5 Gain Flatness RF to RF dB - 0.5 1 IN OUT Noise Figure RF to RF dB - 3.5 4.5 IN OUT Input Return Loss RF dB - 15 - IN Output Return Loss RF dB - 15 - OUT Reverse Isolation RF to RF dB - 37 - OUT IN P1dB 400 MHz dBm - 20 - Output IP2 Two tones, 400 MHz, +5 dBm output per tone dBm - 62 - Output IP3 Two tones, 400 MHz, +5 dBm output per tone dBm - 35 - Composite Triple Beat, CTB 132 Channels, +30 dBmV/Channel at the Output dBc -60 -65 - Composite Second Order, CSO 132 Channels, +30 dBmV/Channel at the Output dBc -55 -60 Cross modulation 132 Channels, +30 dBmV/Channel at the Output dBc - -65 - I V = +5 Volts mA - 215 250 DD DD Recommended PCB Layout Test Circuit Schematic VDD L4 C3 C7 L1 R1 R2 C2 C4 RF IN L3 C1 RF OUT R3 C5 L2 C6 V DD Off-Chip Component Values Component Value Package C1-C7 0.01 F 0402 8 L1, L2 1.0 H 1210 L3 6.8 nH 0402 L4 1.8 nH 0402 R1 470 0402 R2 430 0402 R3 0 0402 8. L1 and L2 supplied from EPCOS, part number B82422A1102K100. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: