MRF422

MRF422 The RF Line NPN Silicon Power Transistor Rev. V1 150W(PEP), 30MHz, 28V Designed primarily for applications as a high power linear amplifier from 2.0 Product Image to 30 MHz. Specified 28 V, 30 MHz characteristics Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40% Intermodulation distortion 150 W (PEP) IMD = 30 dB (min.) 100% tested for load mismatch at all phase angles with 30:1 VSWR CASE 211 11, STYLE 1 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MRF422 The RF Line NPN Silicon Power Transistor Rev. V1 150W(PEP), 30MHz, 28V 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: