MAPRST0912-50 Avionics Pulsed Power Transistor Rev. V2 50 W, 960 - 1215 MHz, 10 s Pulse, 10% Duty Features Outline Drawing NPN Silicon Microwave Power Transistors Common Base Configuration Broadband Class C Operation High Efficiency Inter-Digitized Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package RoHS* Compliant Description The MAPRST0912-50 is a RF power transistor. These high power transistors are ideal for avionics, communications, radar, and industrial, scientific, and medical applications. Electrical Specifications: T = +25C 5C, V = 50 V, P = 6.2 W (unless otherwise noted) A CC IN Parameter Test Conditions Symbol Min. Max. Units Collector-Emitter Breakdown Voltage I = 15 mA BV 65 - V C CES Collector-Emitter Leakage Current V = 40 V I - 2.0 mA CE CES Thermal Resistance F = 960, 1090, 1215 MHz R - 0.80 C/W TH(JC) Output Power F = 960, 1090, 1215 MHz P 50 - W O Power Gain F = 960, 1090, 1215 MHz G 9.1 - dB P Input Return Loss F = 960, 1090, 1215 MHz RL 40 - dB Collector Efficiency F = 960, 1090, 1215 MHz - -9 % C Load Mismatch Stability F = 960 MHz VSWR-S - 10:1 - Load Mismatch Tolerance F = 960, 1090, 1215 MHz VSWR-T - 1.5:1 - * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAPRST0912-50 Avionics Pulsed Power Transistor Rev. V2 50 W, 960 - 1215 MHz, 10 s Pulse, 10% Duty Typical RF Performance P1dB Overdrive Freq. Pin Pout Gain Gain Ic Eff RL VSWR-S VSWR-T (MHz) (W) (W) (dB) (A) (%) (dB) (1.5:1) (10:1) (dB) Pout (W) Po 960 6.2 65.9 10.25 - 2.66 49.6 -22.2 S P 73.4 0.48 1090 6.2 61.9 9.98 - 2.58 48.0 -15.2 S - 68.7 0.45 1215 6.2 64.6 10.16 0.35 2.50 51.6 -15.9 S - 74.8 0.63 Note: Po(dB) is the difference between Pout at 1dB overdrive and Pout at Pin = 6.2 W. Absolute Maximum Ratings +25C Output Power vs. Input Power 80 Parameter Rating Collector-Emitter Voltage (V ) 65 V CES 70 Emitter-Base Voltage (V ) 3.0 V EBO 60 Collector Current (Peak) (I ) 5.3 A C Power Dissipation +25C (P ) 220 kW TOT 960 MHz 50 1090 MHz 1215 MHz Storage Temperature (T ) -65C to +200C STG 40 Junction Temperature (T ) 200C J 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 Input Power (W) Gain vs. Frequency Collector Efficiency vs. Frequency 10.8 60 10.4 54 10.0 48 9.6 42 9.2 36 8.8 30 950 1000 1050 1100 1150 1200 1250 950 1000 1050 1100 1150 1200 1250 Frequency (MHz) Frequency (MHz) 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: