PH3135-90S MACOM

PH3135-90S electronic component of MACOM
PH3135-90S MACOM
PH3135-90S RF Bipolar Transistors
PH3135-90S  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PH3135-90S RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. PH3135-90S RF Bipolar Transistors are a product manufactured by MACOM. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

Part No.PH3135-90S
Manufacturer:MACOM
Category:RF Bipolar Transistors
Description:RF Bipolar Transistors 3.1-3.5GHz 90W 2us Pulse
Datasheet:PH3135-90S Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
  
1: USD 728.981 ea
Line Total: USD 728.98 
Availability : 4
  
Ship by Fri. 19 Jun to Tue. 23 Jun
QtyUnit Price
1$ 728.981
10$ 657.701
  

Availability4
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 728.981
10$ 657.701

   
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We are delighted to provide the PH3135-90S from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PH3135-90S and other electronic components in the RF Bipolar Transistors category and beyond.

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PH3135-90S Radar Pulsed Power Transistor M/A-COM Products 90W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant Absolute Maximum Ratings at 25C Parameter Symbol Rating Units Collector-Emitter Voltage V 65 V CES Emitter-Base Voltage V 3.0 V EBO Collector Current (Peak) I 10.7 A C Power Dissipation +25C P 580 W TOT Storage Temperature T -65 to +200 C STG Junction Temperature T 200 C J Electrical Specifications: T = 25 5C (Room Ambient ) C Parameter Test Conditions Frequency Symbol Min Max Units Collector-Emitter Breakdown Voltage I = 40mA BV 65 - V C CES Collector-Emitter Leakage Current V = 40V I - 7.5 mA CE CES Thermal Resistance Vcc = 36V, Pout = 90W F = 3.1, 3.3, 3.5 GHz R - 0.3 C/W TH(JC) Output Power Vcc = 36V, Pout = 90W F = 3.1, 3.3, 3.5 GHz P - 16 W IN Power Gain Vcc = 36V, Pout = 90W F = 3.1, 3.3, 3.5 GHz G 7.5 - dB P Collector Efficiency Vcc = 36V, Pout = 90W F = 3.1, 3.3, 3.5 GHz 35 - % C Input Return Loss Vcc = 36V, Pout = 90W F = 3.1, 3.3, 3.5 GHz RL - -6 dB Load Mismatch Tolerance Vcc = 36V, Pout = 90W F = 3.1, 3.3, 3.5 GHz VSWR-T - 2:1 - 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. PH3135-90S Radar Pulsed Power Transistor M/A-COM Products 90W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 RF Test Fixture Impedance F (GHz) Z ( ) Z ( ) IF OF 3.1 8.9 - j11.2 5.2 - j11.0 3.3 8.7 - j8.6 4.2 - j8.8 3.5 8.6 - j6.0 4.7 - j7.0 Test Fixture Circuit Dimensions Test Fixture Assembly 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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