Product Information

MASW-000555-13570G

MASW-000555-13570G electronic component of MACOM

Datasheet
RF Switch SP5T 50MHz to 50GHz 30dB Gel

Manufacturer: MACOM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 24.8625 ea
Line Total: USD 1243.125

0 - Global Stock
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 50
Multiples : 50
50 : USD 24.8625

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Frequency
Insertion Loss
Packaging
Packaging
Brand
Rad Hardened
Isolation Voltage
Switching Speed
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MA4AGSW5 SP5T AlGaAs PIN Diode Switch Rev. V5 FEATURES Ultra Broad Bandwidth : 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 1.7dB Insertion Loss at 50 GHZ 35 dB Isolation at 50 GHz Low Current consumption. -10mA for low loss state +10mA for Isolation state M/A-COM Techs unique AlGaAs hetero-junction anode technology. Silicon Nitride Passivation Polymer Scratch protection RoHS Compliant* and 260C Reflow Compatible Yellow areas indicate bond pads DESCRIPTION The MA4AGSW5 is an Aluminum-Gallium-Arsenide, single pole, five throw (SP4T), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using M/A-COM Techs patented hetero- junction technology. This technology produces a switch with less loss than conventional GaAs proc- esses. As much as a 0.3 dB reduction in insertion loss can be realized at 50GHz. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer Absolute Maximum Ratings T = +25C AMB for scratch protection. The protective coating prevents damage to the diode junction and anode Parameter Maximum Rating air-bridges during handling and assembly. Off chip Operating Temperature -55C to +125C bias circuitry is required. Storage Temperature -55C to +150C APPLICATIONS Incident C.W. RF Power +23dBm C.W. The high electron mobility of AlGaAs and the low Breakdown Voltage 25V capacitance of the PIN diodes makes this switch Bias Current 25mA ideal for fast switching, high frequency, multi-throw switch designs. These AlGaAs PIN switches are use Assembly Temperature +300C < 10 sec in switching arrays for radar systems, radiometers, Junction Temperature +175C test equipment and other multi-assembly compo- nents. Maximum combined operating conditions for RF Power, D.C. bias, and temperature: +23 dBm C.W. 10 mA (per diode) +85C. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, India Tel: +91.80.43537383 China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW5 SP5T AlGaAs PIN Diode Switch Rev. V5 Electrical Specifications T = 25C, +/-10mA bias current A (On-wafer measurements) FREQUENCY RF PARAMETER MAX UNITS PORT BIAS BAND 0.05 - 18 GHz 1.4 dB J2 to J1 -10 mA J2, +10 mA J3, J4, J5, J6 18 - 50 GHz 1.9 dB 0.05 - 18 GHz 1.4 dB J3 to J1 -10 mA J3, +10 mA J2, J4, J5, J6 18 - 50 GHz 1.9 dB 0.05 - 18 GHz 1.4 dB J4 to J1 -10 mA J4, +10 mA J2, J3, J5, J6 INSERTION LOSS 18 - 50 GHz 1.9 dB 0.05 - 18 GHz 1.4 dB J5 to J1 -10 mA J5, +10 mA J2, J3, J4, J6 18 - 50 GHz 1.9 dB 0.05 - 18 GHz 1.4 dB J6 to J1 -10 mA J6, +10 mA J2, J3, J4, J5 18 - 50 GHz 1.9 dB FREQUENCY BAND MIN UNITS PORT BIAS RF PARAMETER 0.05 - 18 GHz 35.0 dB J2 to J1 -10 mA J6, +10 mA J3, J4, J5, J2 18 - 50 GHz 30.0 dB 0.05 - 18 GHz 35.0 dB J3 to J1 -10 mA J6, +10 mA J2, J4, J5, J2 18 - 50 GHz 30.0 dB 0.05 - 18 GHz 35.0 dB J4 to J1 -10 mA J6, +10 mA J2, J3, J5, J2 ISOLATION* 18 - 50 GHz 30.0 dB 0.05 - 18 GHz 35.0 dB J5 to J1 -10 mA J6, +10 mA J2, J3, J4, J2 18 - 50 GHz 30.0 dB 0.05 - 18 GHz 35.0 dB J6 to J1 -10 mA J2, +10 mA J2, J3, J4, J6 18 - 50 GHz 30.0 dB RF PARAMETER FREQUENCY BAND MIN UNITS PORT BIAS 0.05 - 18 GHz 12.0 dB J2 to J1 -10 mA J2, +10 mA J3, J4, J5, J6 18 - 50 GHz 12.0 dB 0.05 - 18 GHz 12.0 dB J3 to J1 -10 mA J3, +10 mA J2, J4, J5, J6 18 - 50 GHz 12.0 dB INPUT/OUTPUT 0.05 - 18 GHz 12.0 dB J4 to J1 -10 mA J4, +10 mA J2, J3, J5, J6 RETURN LOSS 18 - 50 GHz 12.0 dB 0.05 - 18 GHz 12.0 dB J5 to J1 -10 mA J5, +10 mA J2, J3, J4, J6 18 - 50 GHz 12.0 dB 0.05 - 18 GHz 12.0 dB J6 to J1 -10 mA J6, +10 mA J2, J3, J4, J5 18 - 50 GHz 12.0 dB *Note: Isolation is measured through (3) diodes from common port ( input ) to selected output port with (1) opposite series junction diode in low loss. Isolation for (2) diodes from common port ( Input ) to selected output with the same series junction diode port in low loss = 22 dB Typical. Typical Parameter F ( GHz ) RF Ports Test Conditions Units Value Switching Speed* 10.0 J1 to J2,J3,J4,J5,J6 +/- 5V TTL Compatible PIN Diode Driver 15 nS ( 10-90 % RF Voltage ) *Note: Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a +/- 5V TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 pF-560 pF and a resistor between 150-220 ohms to achieve 15 ns rise and fall times. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, India Tel: +91.80.43537383 China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aeroflex / Metelics (MACOM)
Aeroflex Metelics
M/A-COM
M/A-COM / TYCO
M/A-COM Technology Solutions
MA/COM
MACOM
Nitronex

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