Product Information

MASW-000932-001SMB

MASW-000932-001SMB electronic component of MACOM

Datasheet
HMIC™ MASW-000932 Switch, SPDT 10MHz ~ 4GHz Evaluation Board

Manufacturer: MACOM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 1064.7097 ea
Line Total: USD 3194.1291

0 - Global Stock
MOQ: 3  Multiples: 3
Pack Size: 3
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 3
Multiples : 3
3 : USD 952.56

0 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 3
Multiples : 3
3 : USD 905.625
50 : USD 905.613
500 : USD 905.6008

     
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RoHS - XON
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TM HMIC PIN Diode SPDT 80 W Switch for 0.01 - 6.0 GHz High Power Applications MASW-000932 Rev. V3 Features Functional Diagram (Top View) Exceptional Broadband Performance N/C GND T GND Low Loss: T = 0.25 dB 2010 MHz X X High Isolation: R = 43 dB 2010 MHz 1616 15 14 13 X Suitable for High Power LTE, TD-SCDMA, WiMAX, and Military Radio Applications GND 1 12 N/C 1 Surface Mount 4 mm PQFN Package RoHS* Compliant ANT N/C 2 11 Class 2 ESD Rating (HBM 2kv) Applications N/C N/C 3 10 Aerospace & Defense ISM 9 DC2 N/C 4 Description 5 6 8 7 The MASW-000932 is a SPDT high power, N/C N/C R N/C X broadband, high linearity, PIN diode T/R switch for 0.01 - 6.0 GHz applications, including WiMAX & WiFi. The device is provided in an industry standard 1 Pin Configuration lead free 4 mm PQFN plastic package. This device incorporates a PIN diode die fabricated with TM Pin Function MACOMs patented silicon-glass HMIC process. This chip features two silicon pedestals embedded 1,13,15 GND in a low loss, low dispersion glass. The diodes are formed on the top of each pedestal. The topside is 2 ANT fully encapsulated with silicon nitride and has an 2 3,4,5,6,8,10,11,12,16 N/C additional polymer passivation layer. These polymer protective coatings prevent damage and 7 R X contamination during handling and assembly. 9 DC2 This compact SPDT switch offers wideband 14 T performance with excellent isolation to loss ratio for X both T and R states. The PIN diode provides 45 W X X 17 Pad CW power handling at an 85C baseplate temperature and 72 dBm IIP3 at 2010 MHz for 1. The exposed pad centered on the package bottom must be maximum switch performance. connected to RF, DC and thermal ground. 2. MACOM recommends connecting all No Connection (N/C) pins to ground. 3 Ordering Information MASW-000932-13560T 1000 piece reel MASW-000932-001SMB Sample Board 3. Reference Application Note M513 for reel size information. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 111 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: TM HMIC PIN Diode SPDT 80 W Switch for 0.01 - 6.0 GHz High Power Applications MASW-000932 Rev. V3 4 Electrical Specifications : Freq. = 2.0, 2.7, 3.5 GHz, T = +25C, Bias = 100 mA / 28 V A Parameter 100 mA / 28 V Conditions Units Min. Typ. Max. R , 2.0 GHz 0.60 0.80 X T , 2.0 GHz 0.25 , X Insertion Loss R X R , 2.7 GHz 0.72 0.90 X P = 0 dBm dB IN T , 2.7 GHz 0.35 X R , 3.5 GHz 0.80 0.95 X T , 3.5 GHz 0.45 X R to Antenna, 2.0 GHz 40.0 43.0 X T to Antenna, 2.0 GHz 14.0 X Isolation R to Antenna, 2.7 GHz 39.0 41.5 X dB P = 0 dBm T to Antenna, 2.7 GHz 12.0 IN X R to Antenna, 3.5 GHz 34.0 35.0 X T to Antenna, 3.5 GHz 10.0 X P = 0 dBm IN Input Return Loss R dB 34 X T 17 X T Input P0.1dB T to Antenna dBm 49 X X nd T 2 Harmonic P = 30 dBm dBc 80 X IN rd T 3 Harmonic P = 30 dBm dBc 95 X IN T IIP3 P = 10 dBm, F1 = 2010 MHz, F2 = 2020 MHz dBm 72 X IN T CW Input Power 25C Base plate, 2.01 GHz dBm / W 49 / 80 X T CW Input Power 85C Base plate, 2.01 GHz dBm / W 46.5 / 45.0 X R CW Input Power dBm / W 41.5 / 14.0 X (10 - 90% RF Voltage) T RF Switching Speed ns 200 X 1 MHz Rep Rate in Modulating Mode 4. See Bias Table 5,6 9 Absolute Maximum Ratings Minimum Reverse Bias Voltage T = +25C (unless otherwise specified) A Parameter Absolute Maximum Frequency (MHz) DC Voltage (V) 10 Forward Current 125 mA 50 107 10 DC Reverse Voltage 110 V 500 72 7 80 W (49 dBm) 1000 44 T Incident CW Power X 2010 MHz 2000 24 >2000 W, 5 s, T Peak Incident Power 8 X 1% duty Cycle 4000 12 Junction Temperature +175C 6000 8 Operating Temperature -40C to +85C 9. Minimum DC bias voltage to maintain low loss under 80 W of TX power with 1.5:1 VSWR Storage Temperature -55C to +150C 10. The MADR-009150 driver has a 55 V maimum voltage limit. For higher voltages, consider using the MADR-010574 driver. 5. Exceeding these limits may cause permanent damage. 6. MACOM does not recommend sustained operation near these survivability limits. 7. Baseplate temperature must be controlled to a constant +25C. 8. This rating is guaranteed if the RF ports are terminated. 222 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aeroflex / Metelics (MACOM)
Aeroflex Metelics
M/A-COM
M/A-COM / TYCO
M/A-COM Technology Solutions
MA/COM
MACOM
Nitronex

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