Product Information

MASW-003103-13645P

MASW-003103-13645P electronic component of MACOM

Datasheet
RF Switch ICs 50-20000MHz -65C +125C Iso 40dB

Manufacturer: MACOM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 27.048 ea
Line Total: USD 27.05

200 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
200 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1
1 : USD 27.048
10 : USD 25.369
25 : USD 24.2305
100 : USD 22.264
250 : USD 21.2405
500 : USD 20.2745
1000 : USD 20.2745
2500 : USD 19.8375
5000 : USD 19.4925

2910 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 500
Multiples : 500
500 : USD 24.6875

     
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MASW-003103-1364 TM HMIC Silicon PIN Diode SP3T Switch Rev. V3 50 MHz - 20 GHz Features Operates 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance RoHS Compliant Surmount Package Rugged, Fully Monolithic Glass Encapsulated Construction Up to +38 dBm CW Power Handling +25C Silicon Nitride Passivation Polymer Scratch Protection Solderable Functional Schematic Description J3 The MASW-003103-1364 is a SP3T, surmount, broadband, monolithic switch using series and shunt connected silicon PIN diodes. This device is designed for use in broadband, moderate signal, high performance, switch applications up to 20 GHz. It is a surface mountable switch configured for J2 J4 optimized performance and offers a distinct advantage over MMIC, beamlead and chip and wire hybrid designs. Because the PIN diodes of the J1 MASW-004103-1365 are integrated into the chip and kept within close proximity, the parasitics typically associated with other designs that use individual components are kept to a minimum. Pin Configuration To minimize the parasitics and achieve high Pin Function performance the MASW-003103-1364 is fabricated J1 RFC using MACOMs patented HMIC (Heterolithic Microwave Integrated Circuit) process. This process J2 RF1 allows the silicon pedestals, which form the series and shunt diodes or vias, to be imbeded in low loss, J3 RF2 low dispersion glass. The combination of low loss J4 RF3 glass and using tight spacing between elements results in an HMIC device with low loss and high isolation through low millimeter wave frequencies. Ordering Information The topside is fully encapsulated with silicon nitride and also has an additional layer of polymer for Part Package scratch and impact protection. The protective MASW-003103-13640G 50 piece gel pack coating guards against damage to the junction and the anode airbridges during handling and assembly. MASW-003103-13645P 500 piece reel On the backside of the chip gold metalized pads MASW-003103-13640P 3000 piece reel have been added to produce a solderable surmount device. MASW-003103-001SMB Sample Test Board 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MASW-003103-1364 TM HMIC Silicon PIN Diode SP3T Switch Rev. V3 50 MHz - 20 GHz Electrical Specifications: T = 25C, P = 0 dBm, Z = 50 , 20 mA, -10 V A IN 0 Parameter Conditions Units Min. Typ. Max. 6 GHz 0.5 0.6 Insertion Loss 13 GHz dB 0.8 1.1 20 GHz 1.2 1.4 6 GHz 50 54 Isolation 13 GHz dB 37 40 20 GHz 25 31 6 GHz 19 25 Input Return Loss 13 GHz dB 14 22 20 GHz 14 21 6 GHz 57 Output to Output Isolation 13 GHz dB 42 20 GHz 30 Input 0.1 dB Compression Point 2 GHz dBm 36 1 Switching Speed ns 20 2 Voltage Rating V 80 1. Typical Switching Speed measured from 10% to 90 % of detected RF signal driven by TTL compatible drivers. 2. Maximum reverse leakage current in either the shunt or series PIN diodes shall be 0.5 A maximum -80 volts. 3,4,5 Absolute Maximum Ratings Handling Procedures Please observe the following precautions to avoid Parameter Absolute Maximum damage: RF CW Incident Power 2 GHz 38 dBm Static Sensitivity 20 GHz 33 dBm These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged Applied Reverse Voltage -80 V by static electricity. Proper ESD control techniques Bias Current +25C 50 mA should be used when handling these Class 1A HBM devices. Junction Temperature +175C Operating Temperature -65C to +125C Storage Temperature -65C to +150C 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 5. Combined maximum operating conditions for RF power, DC bias, & temperature: 33 dBm CW, 20 mA per diode, +85C. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aeroflex / Metelics (MACOM)
Aeroflex Metelics
M/A-COM
M/A-COM / TYCO
M/A-COM Technology Solutions
MA/COM
MACOM
Nitronex

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