Product Information

MASW-010647-13950G

MASW-010647-13950G electronic component of MACOM

Datasheet
M/A-COM Technology Solutions Switch,SP2TM,Die

Manufacturer: MACOM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 286.9129 ea
Line Total: USD 286.91

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1
1 : USD 283.0406
10 : USD 260.2391
25 : USD 254.4983

     
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MASW-010647 20 W HMIC Silicon PIN Diode Terminated SPDT Switch Rev. V2 8.0 - 10.5 GHz Features Functional Diagram Low Insertion Loss B3 J1 B2 High Isolation Low Parasitic Capacitance and Inductance Fully Monolithic Die, Integrated Bias Network Glass Encapsulated Construction C C Greater than 20 W CW Power Handling +85C L L Silicon Nitride Passivation Polymer Scratch Protection SW2 SW1 RoHS* Compliant J3 J2 C C C C Description Rterm2 Rterm1 The MASW-010647 is a monolithic, terminated Silicon (50 ) (50 ) PIN diode SPDT switch designed for X-Band high power, high performance applications. The switch handles greater than 20 W of CW power over the 8.0 - 10.5 GHz frequency band. 2 The device is fabricated using MACOMs patented Pin Configuration HMIC process, which allows for the integration of silicon pedestals that embed series and shunt diodes in Pin Function low loss, low dispersion glass. The switch offers low insertion loss of 0.8 dB as well as high isolation J1 RF COMMON performance of 37 dB. The device integrates a bias network to allow for simplified bias application and J2 RF OUT switch control. J3 RF OUT The topside is fully encapsulated with silicon nitride passivation and an additional polymer layer for scratch B2 Bias of J2 and impact protection. These protective coatings prevent damage to the semiconductor junctions and B3 Bias of J3 metal air bridges during handling and assembly. 2. The exposed metallization on the chip bottom must be connected to RF, DC and thermal ground. 1 Ordering Information Part Number Package MASW-010647-13950G Die in Gel Pack MASW-010647-13950W Die in Waffle Pack 1. Die quantity varies. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MASW-010647 20 W HMIC Silicon PIN Diode Terminated SPDT Switch Rev. V2 8.0 - 10.5 GHz Electrical Specifications: T = +25C, Z = 50 , P = 0 dBm (unless otherwise noted) A 0 IN Parameter Test Conditions Units Min. Typ. Max. 8.0 GHz 0.70 Insertion Loss 8.5 GHz 0.70 0.9 dB 3 (-5 V / 0 mA Bias) 9.5 GHz 0.75 1.0 10.5 GHz 0.85 1.1 8.0 GHz 33 Input to Output Isolation 8.5 GHz 32 35 dB (+5 V / 55 mA Bias) 9.5 GHz 34 37 10.5 GHz 35 39 8.0 GHz 25 8.5 GHz 19 28 Input Return Loss dB 9.5 GHz 17 24 10.5 GHz 13 18 8.0 GHz 14 Return Loss (Termination) 8.5 GHz 12 18 dB (+5 V / 55 mA Bias) 9.5 GHz 12 31 10.5 GHz 14 10 GHz, +20 dBm, Input IP3 dBm >60 10 & 100 MHz spacing 10 GHz, +/- 4 V, PW 500 ns, 4 Switching Speed ns 130 50% duty cycle 3. R. Caverly and G. Hiller, Establishing the Minimum Reverse Bias for a P-I-N Diode in a High Power Switch, IEEE Transactions on Microwave Theory and Techniques, Vol.38, No.12, December 1990 4. Typical switching speed measured from 10% to 90 % of detected RF signal driven by TTL compatible drivers. MACOM recommends the MADR-007097, Complementary Channel TTL PIN Diode Driver. 3 Driver Connections Bias Control Optimal operation is achieved by simultaneous DC Control Voltages Condition of application of negative DC voltage to the low loss (DC Currents) RF Output switch path and positive DC voltage to the isolating B2 B3 J1-J2 J1-J3 switch path. 3 -5 V +5 V In the low loss path, the diodes are reverse biased. Low Loss Isolation (0 mA) (55 mA typ.) In the isolating path, the diodes are forward biased. 3 +5 V -5 V Isolation Low Loss Minimum Reverse Bias Required: (55 mA typ.) (0 mA) At X-Band, with a 1:1 match, 5 V of reverse bias is required. With a 4:1 match, 10 V of reverse bias is required. However MACOM recommends 30 V of reverse bias to achieve optimal operating conditions. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aeroflex / Metelics (MACOM)
Aeroflex Metelics
M/A-COM
M/A-COM / TYCO
M/A-COM Technology Solutions
MA/COM
MACOM
Nitronex

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