Product Information

MASW-011021-14010G

MASW-011021-14010G electronic component of MACOM

Datasheet
MACOM RF Switch ICs 6-14GHz SPDT HMIC IL 12GHz .65dB

Manufacturer: MACOM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

25: USD 154.6791 ea
Line Total: USD 3866.98

0 - Global Stock
MOQ: 25  Multiples: 25
Pack Size: 25
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 25
Multiples : 25
25 : USD 146.6825
100 : USD 146.6825
250 : USD 146.6825
500 : USD 146.6825
1000 : USD 146.6825
2500 : USD 146.6825

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Switch Configuration
Insertion Loss
Maximum Operating Temperature
Packaging
Operating Frequency
Minimum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
MAAP-011027-000SMB electronic component of MACOM MAAP-011027-000SMB

RF Amplifier Amplifier,Sample Brd Asy,8W,5.2-5.9GHz
Stock : 0

A66-3 electronic component of MACOM A66-3

RF Amplifier 10-1000MHz NF 3.0dB Gain 26.0dB
Stock : 1

MAADSS0008SMB electronic component of MACOM MAADSS0008SMB

RF Development Tools Sample Board Assembly, SOT-25
Stock : 0

MAAL-010705-001SMB electronic component of MACOM MAAL-010705-001SMB

RF Development Tools Sample Board,Assy,2mmPDFN-8LD
Stock : 0

MA46H204-1056 electronic component of MACOM MA46H204-1056

MACOM Varactor Diodes Brkdn V 30V min. Gamma .48-.5
Stock : 131

M8TH electronic component of MACOM M8TH

Up/Down Conv Mixer 2GHz 4-Pin TO-8
Stock : 0

DS-109-PIN electronic component of MACOM DS-109-PIN

MACOM Signal Conditioning 10-500MHz 50 ohm IL .6dB max
Stock : 7

AL7S electronic component of MACOM AL7S

AL7S
Stock : 1

M85C electronic component of MACOM M85C

RF Mixer Mixer,Microwave
Stock : 1

A57 electronic component of MACOM A57

RF Amplifier 10-500MHz NF 4.8dB Gain 14.7dB
Stock : 1

Image Description
MASW-009444-001SMB electronic component of MACOM MASW-009444-001SMB

RF Switch ICs Sample Board Assy, 1mmX1-PDFN-6LD
Stock : 0

MASWSS0130SMB electronic component of MACOM MASWSS0130SMB

RF Switch ICs SMB,DPDT Switch 0.5-3.0 GHz,3mm -12MLF
Stock : 0

MASW-010350-001SMB electronic component of MACOM MASW-010350-001SMB

- MASW-010350 Switch, SP4T 10MHz ~ 4GHz Evaluation Board
Stock : 0

MASWSS0151SMB electronic component of MACOM MASWSS0151SMB

- MASWSS0151 Switch, SPDT 0Hz ~ 3GHz Evaluation Board
Stock : 0

SKY13335-381LF electronic component of Skyworks SKY13335-381LF

RF Switch ICs .1-6.0GHz SPDT IL .4dB @2.5GHz
Stock : 1654

HMC194AMS8E electronic component of Analog Devices HMC194AMS8E

Analog Devices Hittite RF Switch ICs
Stock : 1

RFSW6024TR13 electronic component of Qorvo RFSW6024TR13

RF Switch ICs 5-6000MHz SPDT
Stock : 0

F2915NBGK electronic component of Integrated Device Tech F2915NBGK

RF Switches QFN-24 RoHS
Stock : 0

TPG113S6 electronic component of TECH PUBLIC TPG113S6

RF Switches SOT23-6 RoHS
Stock : 1

MMS006PP3E electronic component of Microchip MMS006PP3E

- MMS006PP3 Switch, SPDT 0Hz ~ 20GHz Evaluation Board
Stock : 0

TM SURMOUNT Silicon PIN Diode SPDT Switch 6 - 14 GHz MASW-011021 Rev. V6 Features Specified from 8 - 12 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance Surface Mountable, Fully Monolithic Die Glass Encapsulated Construction 4 20 W Pulsed Power Handling Silicon Nitride Passivation Polymer Scratch Protection RoHS* Compliant Applications Aerospace & Defense Functional Schematic Description J1 This device is a SURMOUNT X-Band monolithic SPDT switch designed for high power, high J3 J2 performance applications. This surface mount B2 B1 chip-scale configuration is designed with minimal parasitics usually associated with hybrid MIC designs incorporating beam lead and/or bondable PIN diodes that require chip and wire assembly. This device is fabricated using MACOMs patented HMIC (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes and/or vias by embedding them in low loss, low dispersion glass. 2 Pin Configuration Selective backside metalization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent J1 RF C damage to the junction and the anode airbridge during handling and assembly. J2 RF 1 1 Ordering Information J3 RF 2 Part Number Package B1 Bias 1 MASW-011021-14010G 25 piece gel pack B2 Bias 2 MASW-011021-001SMB Sample Test Board 2. The exposed pad centered on the chip bottom must be connected to RF and DC ground. 1. Reference Application Note M513 for reel size information. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: TM SURMOUNT Silicon PIN Diode SPDT Switch 6 - 14 GHz MASW-011021 Rev. V6 Electrical Specifications: Bias: -5 V, +30 mA, T = 25C, P = 0 dBm, Z = 50 A IN 0 Parameter Units Min. Typ. Max. 8 GHz 0.70 Insertion Loss 10 GHz dB 0.70 0.85 12 GHz 0.65 8 GHz 34 Input to Output Isolation 10 GHz dB 30 36 12 GHz 34 Return Loss dB 15 IIP3 dBm 60 3 Voltage Rating V 80 10% to 90 % of detected RF signal Switching Speed ns 130 driven by TTL compatible drivers 4 CW Power Handling -30 V, +30 mA W 10 3. Maximum reverse leakage current in the shunt PIN diodes shall be 0.1 A maximum. 4. 20 W up to 300 s 40% Duty Cycle 5,6 Absolute Maximum Ratings Handling Procedures Please observe the following precautions to avoid Parameter Absolute Maximum damage: Bias Current +25C 100 mA Static Sensitivity These electronic devices are sensitive to DC Reverse Voltage 80 V electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques Junction Temperature +175C should be used when handling these Class 1A HBM devices. Operating Temperature -65C to +125C Storage Temperature -65C to +150C 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. MACOM does not recommend sustained operation near these survivability limits. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aeroflex / Metelics (MACOM)
Aeroflex Metelics
M/A-COM
M/A-COM / TYCO
M/A-COM Technology Solutions
MA/COM
MACOM
Nitronex

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted