Product Information

MASW-011098

MASW-011098 electronic component of MACOM

Datasheet
RF Switch ICs Ka-Band High Power Reflective SPDT PIN Switch 26 - 40 GHz

Manufacturer: MACOM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 591.5094 ea
Line Total: USD 5915.09

0 - Global Stock
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 10
Multiples : 10
10 : USD 567.8491

     
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Ka-Band High Power Reflective SPDT PIN Switch 26 - 40 GHz MASW-011098 Rev. V3 Features Functional Diagram Low Loss: 1.1 dB 40 GHz High Isolation: 39 dB 40 GHz B2 GND RFC GND B1 Up to 13 W CW Power Handling, +85C Switching Speed <30 ns 20 19 18 17 16 Integrated DC Blocks and RF Bias Networks N/C 15 N/C 1 5 mm 20-lead Laminate Package RoHS* Compliant C C L GND 2 L 14 GND Applications 5G Wireless Infrastructure RF2 3 13 RF1 SW2 SW1 C C C C Description GND 4 12 GND The MASW-011098 is a high power SPDT PIN diode switch in a 5 mm laminate package. This broadband, reflective, high linearity, switch was developed for N/C 5 11 N/C 26 - 40 GHz applications that require up to 13 W of 6 7 8 9 10 power handling while maintaining low insertion loss and high isolation. N/C N/C N/C N/C N/C The SPDT MMIC utilizes MACOMs proven AlGaAs PIN diode technology. 2, 3 Pin Configuration This switch is ideally suited for 5G, Point-to-Point communications systems, radar systems, radiometers, test and instrumentation equipment Pin Pin Name Function and other high frequency applications. 1, 5 - 11, 15 N/C No Connection 2, 4, 12, 14, 17, 19 GND Ground 1 3 RF2 RF2 Ordering Information 13 RF1 RF1 MASW-011098 Bulk Packaged part 16 B1 Bias 1 MASW-011098-TR0500 500 Part Reel 18 RFC RF COMMON MASW-011098-001SMB Sample Board 20 B2 Bias 2 1. Reference Application Note M513 for reel size information. 2. MACOM recommends connecting all no connection pins to ground. 3. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Ka-Band High Power Reflective SPDT PIN Switch 26 - 40 GHz MASW-011098 Rev. V3 4 5 Electrical Specifications: T = +25C, I = 20 mA, V = -15 V, Z = 50 A F R 0 Parameter Test Conditions Units Min. Typ. Max. 26.0 GHz 0.85 1.3 Insertion Loss 30.0 GHz 0.85 1.5 dB (RF to RFx ON state) 38.5 GHz 1.05 1.7 COMMON 40.0 GHz 1.15 1.8 26.0 GHz 30 43 Isolation 30.0 GHz 29 40 dB 6 (RF to RFx OFF state) 38.5 GHz 29 38 COMMON 40.0 GHz 27 39 26.0 GHz 20 Return Loss 30.0 GHz 21 dB (RF ) 38.5 GHz 23 COMMON 40.0 GHz 19 26.0 GHz 24 Return Loss 30.0 GHz 24 dB (RFx ON state) 38.5 GHz 27 40.0 GHz 25 dBm 41.2 5 CW Power Handling (ON state) 26.5 GHz, V = -25 V, +85C R W 13 Switching Speed 26.5 GHz T / T 50% DC to 90% RF / 50% DC to 10% RF ns 30 / 21 ON OFF T / T 10% to 90% RF / 90% to 10% RF 10 / 8 RISE FALL Reverse Bias Current -15 V nA 25 4. Forward bias current (I ) is set using external bias resistors (R ) placed at pins B1 and B2, where R = (V - 1.32 V) / I . F BIAS BIAS CC F 5. Reverse bias voltage should be determined based on working conditions. For example, -25 V 41.2 dBm input power. For lower power applications, a less negative voltage can be used. R. Caverly and G. Hiller, Establishing the Minimum Reverse Bias for a PIN Diode in a High Power Switch, IEEE Transactions on Microwave Theory and Techniques, Vol.38, No.12, December 1990. 6. Isolation defined with 1 port in low loss state. 7,8 Absolute Maximum Ratings Truth Table Parameter Absolute Maximum RF Path Bias 1 Bias 2 COMMOM RF1 Insertion Loss Reverse Bias Voltage -50 V -15 V 20 mA RF2 Isolation Forward Bias Current 25 mA RF2 Insertion Loss 20 mA -15 V CW Incident Power 43 dBm 85C RF1 Isolation Operating Temperature -40C to +85C Storage Temperature -65C to +150C 7. Exceeding any one or combination of these limits may cause permanent damage to this device. 8. MACOM does not recommend sustained operation near these survivability limits. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aeroflex / Metelics (MACOM)
Aeroflex Metelics
M/A-COM
M/A-COM / TYCO
M/A-COM Technology Solutions
MA/COM
MACOM
Nitronex

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