MASWSS0162
GaAs SPST Switch
Rev. V4
DC - 2.5 GHz
Features
Functional Schematic
Very Low Power Consumption: 50 W
Low Insertion Loss: 1.0 dB
High Isolation: 35 dB up to 2 GHz
8 7 6 5
Very High Intercept Point: 46 dBm IP3
Nanosecond Switching Speed
Temperature Range: -40C to +85C
Lead-Free SOIC-8 Plastic Package
100% Matte Tin Plating over Copper
Halogen-Free Green Mold Compound
260C Reflow Compatible
RoHS* Compliant Version of SW-259
Description
The MASWSS0162 is a GaAs MMIC SPST switch in
a lead-free SOIC-8 lead surface mount plastic
package.
1 2 3 4
The MASWSS0162 is ideally suited for use where
low power consumption is required. Typical
applications include transmit/receive switching,
switch matrices and switched filter banks in systems
Pin Configuration
such as radio and cellular equipment, PCM, GPS,
fiber optic modules, and other battery powered radio
Pin# Description
equipment.
1 Ground
The MASWSS0162 is fabricated using a monolithic
GaAs MMIC using a mature 1 micron process. The
2 A
process features full chip passivation for increased
performance and reliability.
3 B
4 Ground
1
5 RF Port 2
Ordering Information
6 Ground
Part Number Package
7 Ground
MASWSS0162 Bulk Packaging
MASWSS0162TR 1000 piece reel 8 RF Port 1
1. Reference Application Note M513 for reel size information.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
11
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
MASWSS0162
GaAs SPST Switch
Rev. V4
DC - 2.5 GHz
2
Electrical Specifications : T = +25C, V = -5 V / 0 V, P = 0 dBm
A C IN
3
Parameter Test Conditions Units Min. Typ. Max.
DC - 0.5 GHz 0.8
3
Insertion Loss 0.5 - 1.0 GHz dB 0.9 1.2
1.0 - 2.0 GHz 1.1
DC - 0.5 GHz 65
3
Isolation 0.5 - 1.0 GHz dB 45 53
1.0 - 2.0 GHz 40
VSWR On
DC - 2.0 GHz Ratio 1.2:1
VSWR Off
P @ 0.05 GHz 18
IN
1 dB Compression dBm
P @ 0.5 - 2.0 GHz 23
IN
T , T 10% to 90% RF, 90% to 10% RF ns 4
RISE FALL
T , T 50% Control to 90% RF, 50% Control to 10% RF ns 8
ON OFF
Transients In-Band mV 35
Measured Relative to Input Power,
two-tone up to 5 dBm
2nd Order Intercept 55
0.05 GHz dBm
68
0.5 - 2.0 GHz
Measured Relative to Input Power,
two-tone up to 5 dBm
3rd Order Intercept 40
0.05 GHz dBm
46
0.5 - 2.0 GHz
Control Current A 25
2. All measurements with 0, -5 V control voltages at 1.0 GHz in a 50 system, unless otherwise specified.
3. Typical values listed are based on average of frequency range noted.
4,5
7,8
Absolute Maximum Ratings Truth Table
Control Inputs Condition of Switch
Parameter Absolute Maximum
6
A B RF State
Input Power
0.05 GHz 27 dBm
1 0 On
0.5 - 2.0 GHz 34 dBm
Control Voltage +5 V, -8.5 V
0 1 Off
Operating Temperature -40C to +85C
7. 0 = 0 to -0.2 V @ 20 A maximum.
8. 1 = -5 V @ 20 A typical to -8 V @ 600 A maximum.
Storage Temperature -65C to +150C
4. Exceeding any one or combination of these limits may cause
permanent damage to this device.
5. MACOM does not recommend sustained operation near these
survivability limits.
6. When the RF Input power is applied to a terminated port, the
absolute maximum is +32 dBm.
22
2
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: