MASWSS0175 GaAs DPDT Diversity Switch Rev. V1 4.5 - 6.0 GHz Features Functional Schematic Low Insertion Loss: 0.8 dB at 5.2 GHz Ideal for WLAN IEEE 802.11a 0.5 micron GaAs PHEMT Process Integrated DC Blocking Capacitors Lead-Free 3 mm 12-Lead PQFN Package PIN 1 100% Matte Tin Plating over Copper Halogen-Free Green Mold Compound Ctrl 1 Ctrl 2 260C Reflow Compatible RoHS* Compliant Version of MASWSS0039 Port 3 Port 4 Description The MASWSS0175 is a GaAs pHEMT MMIC DPDT Ctrl 3 Ctrl 4 diversity switch in a lead-free 3 mm 12-lead PQFN package. It is designed for low insertion loss and allows for independent control and selection of each switch path. It integrates blocking capacitors on all RF ports and thus eliminates the need for additional off-chip DC blocking capacitors. The MASWSS0175 is ideally suited for applications where very small size and low cost are required. 2 Pin Configuration Typical applications are for WLAN IEEE 802.11a systems that employ two antennas for transmit and Pin No. Pin Name Description receive diversity. This part can be used in all 1 Ctrl 1 Control 1 systems operating between 4.5 GHz and 6.0 GHz requiring moderate power and diversity switching. 2 Port 3 RF Port 3 3 Ctrl 4 Control 4 The MASWSS0175 is fabricated using a 0.5 micron gate length GaAs pHEMT process. The process 4 N/C No Connection features full passivation for performance and 5 Port 2 RF Port 2 reliability. 6 N/C No Connection 7 Ctrl 3 Control 3 1 Ordering Information 8 Port 4 RF Port 4 Part Number Package 9 Ctrl 2 Control 2 MASWSS0175 Bulk Packaging 10 N/C No Connection MASWSS0175TR-3000 3000 Piece Reel 11 Port 1 RF Port 1 MASWSS0175SMB Sample Test Board 12 N/C No Connection 2 13 Paddle RF and DC Ground 1. Reference Application Note M513 for reel size information. 2. The exposed pad centered on the package bottom must be connected to RF and DC ground. * Restrictions on Hazardous Substances, European Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MASWSS0175 GaAs DPDT Diversity Switch Rev. V1 4.5 - 6.0 GHz Electrical Specifications: T = 25C, Z = 50 , V = 0 V / 3 V A 0 C Parameter Test Conditions Units Min. Typ. Max. 4.9 GHz 0.9 1.3 Insertion Loss 5.2 GHz dB 0.8 1.2 5.8 GHz 0.8 1.2 4.9 GHz 15 20 Isolation 5.2 GHz dB 20 25 5.8 GHz 20 29 Return Loss 4.5 - 6.0 GHz dB 15 25 5.2 GHz, V = 2.7 V 31 C P1dB 5.2 GHz, V = 3.0 V dBm 33 C 5.2 GHz, V = 5.0 V 39 C Two Tone, +15 dBm / tone, 5 MHz Spacing IP2 5.2 GHz dBm 98 Two Tone, +15 dBm / tone, 5 MHz Spacing IP3 5.2 GHz, V = 3 V 52 C dBm 5.2 GHz, V = 5 V 55 C nd 2 Harmonic 5.2 GHz, P = 20 dBm dBc -85 IN rd 3 Harmonic 5.2 GHz, P = 20 dBm dBc -83 IN Trise, Tfall 10% to 90% RF and 90% to 10% RF ns 20 50% Control to 90% RF 35 Ton, Toff ns 50% Control to 10% RF 40 Control Current V = 3 V A 5 25 C 3,4 Absolute Maximum Ratings Handling Procedures Please observe the following precautions to avoid Parameter Absolute Maximum damage: Input Power 3 V Control +32 dBm Static Sensitivity Input Power 5 V Control +36 dBm Gallium Arsenide Integrated Circuits are sensitive Operating Voltage +8.5 volts to electrostatic discharge (ESD) and can be Operating Temperature -40 C to +85 C damaged by static electricity. Proper ESD control techniques should be used when handling these Storage Temperature -65 C to +150 C devices. 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. M/A-COM does not recommend sustained operation near these survivability limits. 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: