GaN Power Transistor, 28 V, 25 W DC - 4 GHz NPTB00025 Rev. V1 Functional Schematic Features Optimized for Broadband Operation (DC - 4 GHz) 25 W P3dB CW Narrowband Power 10 W P3dB CW Broadband Power (0.05 - 1 GHz) Characterized for Operation up to 32 V 100% RF Tested Thermally-Enhanced Surface Mount Package High Reliability Gold Metallization Process Subject to EAR99 Export Control RoHS* Compliant Applications Defense Communications Land Mobile Radio Pin Configuration Avionics Wireless Infrastructure ISM 1 RF / V RF Input / Gate VHF/UHF/L/S-Band Radar IN G 2 RF / V RF Output / Drain OUT D Description 1 The NPTB00025 GaN HEMT is a power transistor 3 Flange Ground / Source optimized for DC - 4 GHz operation. This device 1. The Flange must be connected to RF and DC ground. This supports CW, pulsed, and linear operation with path must also provide a low thermal resistance heat path. output power levels to 25 W. This transistor is assembled in an industry standard surface mount plastic package. Ordering Information Part Number Package NPTB00025B 30 slot tray * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: GaN Power Transistor, 28 V, 25 W DC - 4 GHz NPTB00025 Rev. V1 Typical CW RF Specifications: (measured in a test fixture) Freq. = 3 GHz, V = 28 V, I = 225 mA, T = 25C DS DQ C Parameter Test Conditions Symbol Min. Typ. Max. Units 3 dB Compression P 22 25 3dB Average Output Power W 1 dB Compression P 18 21 1dB Small Signal Gain G 12.5 13.5 dB SS Drain Efficiency 3 dB Compression 60 65 % VSWR = 10:1. all phase angles, Output Mismatch Stress No performance degradation after test P = P OUT SAT DC Electrical Characteristics: T = 25C C Parameter Test Conditions Symbol Min. Typ. Max. Units Off Characteristics Drain-Source Breakdown Voltage V = -8 V, I = 8 mA V 100 V GS D BDS Drain-Source Leakage Current V = -8 V, V = 60 V I 1 5 mA GS DS DLK On Characteristics Gate Threshold Voltage V = 28 V, I = 8 mA V -2.3 -1.8 -1.3 V DS D T Gate Quiescent Voltage V = 28 V, I = 225 mA V -2.0 -1.5 -1.0 V DS D GSQ On Resistance V = 2 V, I = 60 mA R 0.44 0.55 GS D ON V = 7 V pulsed, pulse width 300 s DS Drain Current I 4.9 5.4 A D 0.2% Duty Cycle, V = 2 V GS Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1A devices. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: