1 W Heterojunction Field Effect Transistor (HFET) DC - 6 GHz XF1001-SC Rev. V3 Features Functional Block Diagram 15.5 dB Gain 1.9 GHz GGNNDD 10.0 dB Gain 5.8 GHz 46.5 dBm Output IP3 30.0 dBm P1dB SOT-89 Surface Mount Technology Package RoHS* Compliant Applications Aerospace and Defense Wireless Networking and Communication PPiinn 11 Description The XF1001-SC is a high linearity Heterojunction RRFF GGNNDD RRFF IINN OOUUTT Field Effect Transistor (HFET) housed in an industry standard SOT-89 package. Optimum performance is 3 achieved when the device is biased at a drain Pin Configuration voltage of 8 V and drain current of 300 mA. At this bias point, the device is capable of >30 dBm of Pin Function P1dB and OIP3 of >46 dBm. 1 RF Input The XF1001-SC is suitable for applications up to 2, 4 Ground 6 GHz where it has 10 dB of gain. 3 RF Output / Bias 3. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. 1,2 Ordering Information Part Number Package XF1001-SC-0G00 Bulk Packaging XF1001-SC-0G0T 3000 piece reel XF1001-SC-EV1 Evaluation Board 1. Reference Application Note M513 for reel size information. 2. All sample boards include 5 loose parts. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: 1 W Heterojunction Field Effect Transistor (HFET) DC - 6 GHz XF1001-SC Rev. V3 Electrical Specifications: T = +25C, V = 8 V, Z = 50 A DD 0 Externally matched Gain 1.9 GHz dB 13.5 15.5 5.8 GHz 10.0 1.9 GHz 4.5 Noise Figure dB 5.8 GHz 5.0 1.9 GHz 12.5 Input Return Loss dB 5.8 GHz 22.5 1.9 GHz 7.5 Output Return Loss dB 5.8 GHz 7.5 1.9 GHz 29 30 Output P1dB dBm 5.8 GHz 30 Pout/Tone = 13 dBm, Spacing = 5 MHz Output IP3 dBm 44.0 46.5 1.9 GHz 46.5 5.8 GHz 1.9 GHz 300 330 Quiescent Current mA 5.8 GHz 300 4,5 Absolute Maximum Ratings Handling Procedures Please observe the following precautions to avoid damage: Supply Voltage 9 V Static Sensitivity Gate Voltage (V ) -2.5 V < V < 0 V G G These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged Input Power 24 dBm by static electricity. Proper ESD control techniques Power Dissipation 4.5 W should be used when handling these Class 1A devices. Current 450 mA Junction Temperature +175C Operating Temperature -40C to +85C Storage Temperature -55C to +150C Thermal Resistance 30C/W 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. MACOM does not recommend sustained operation near these survivability limits. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: