X-On Electronics has gained recognition as a prominent supplier of MX30LF2G28AB-TI NAND Flash across the USA, India, Europe, Australia, and various other global locations. MX30LF2G28AB-TI NAND Flash are a product manufactured by Macronix. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

MX30LF2G28AB-TI Macronix

MX30LF2G28AB-TI electronic component of Macronix
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See Product Specifications
Part No. MX30LF2G28AB-TI
Manufacturer: Macronix
Category: NAND Flash
Description: MX30LF2G28AB-TI
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
96: USD 4.6547 ea
Line Total: USD 446.85 
Availability - 0
MOQ: 96  Multiples: 96
Pack Size: 96
Availability Price Quantity
0
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 96
Multiples : 96
96 : USD 4.6547
192 : USD 4.6547
288 : USD 4.6547
384 : USD 4.6547

   
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We are delighted to provide the MX30LF2G28AB-TI from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MX30LF2G28AB-TI and other electronic components in the NAND Flash category and beyond.

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The MX30LF2G28AB-TI is an integrated 2 Gb 3-V DRAM Memory device from Macronix International Co. Ltd. It is a high-speed, low-power DRAM designed for use in mobile and embedded applications. The device has an array of 2 Gbit memory cells organized as 8 banks of 256 Mbit each, allowing for parallel multiple 512-bit read and write operations. The device utilizes the low-power (1.8 V) DDR3 interface and a low-power standby mode, allowing for minimal power consumption while in standby. The device also has an integrated ECC (error correction code) feature, which can detect and correct single-bit errors. The MX30LF2G28AB-TI offers high-speed and low-power performance, making it ideal for a wide range of mobile and embedded applications.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Macronix International
MX7
MXA
MXIC(Macronix)
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