MDP1921TH Magnachip

MDP1921 Single N-Channel Trench MOSFET 100V MDP1921 Single N-channel Trench MOSFET 100V, 120A, 4.5m General Description Features The MDP1921 uses advanced MagnaChip s MOSFET V = 100V DS Technology, which provides high performance in on-state ID = 120A VGS = 10V resistance, fast switching performance and excellent R DS(ON) quality. MDP1921 is suitable device for DC/DC Converter < 4.5 m V = 10V GS and general purpose applications. 100% UIL Tested 100% Rg Tested D G S TO-220 o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS o T =25 C (Silicon Limited) 153 C (1) o Continuous Drain Current T =25 C (Package Limited) I 120 C D A o TC=100 C 97 Pulsed Drain Current I 480 DM o T =25 C 223 C Power Dissipation P W D o T =100 C 89 C (2) Single Pulse Avalanche Energy E 609 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient R 62.5 JA o C/W Thermal Resistance, Junction-to-Case R 0.56 JC 1 Jun. 2013. Version 1.2 MagnaChip Semiconductor Ltd. MDP1921 Single N-Channel Trench MOSFET 100V Ordering Information Part Number Temp. Range Package Packing RoHS Status o MDP1921TH -55~150 C TO-220 Tube Halogen Free o Electrical Characteristics (T =25 C) J Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 100 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 2.0 2.9 4.0 GS(th) DS GS D Drain Cut-Off Current I V = 80V, V = 0V - - 1.0 DSS DS GS A Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS Drain-Source ON Resistance R V = 10V, I = 50A - 3.8 4.5 m DS(ON) GS D Forward Transconductance g V = 10V, I = 50A - 120 - S fs DS D Dynamic Characteristics Total Gate Charge Q - 100 - g VDS = 50V, ID = 50A, Gate-Source Charge Q - 27 - nC gs V = 10V GS Gate-Drain Charge Q - 26 - gd Input Capacitance C - 6750 - iss V = 40V, V = 0V, DS GS Reverse Transfer Capacitance C - 50 - pF rss f = 1.0MHz Output Capacitance C - 1300 - oss Turn-On Delay Time t - 30.4 - d(on) Rise Time t - 28.8 - r V = 10V, V = 50V, GS DS ns I = 50A , R = 3.0 D G Turn-Off Delay Time t - 93.0 - d(off) Fall Time t - 34.2 - f Gate Resistance Rg f=1 MHz - 2.5 - Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 50A, V = 0V - 0.9 1.2 V SD S GS Body Diode Reverse Recovery Time t - 73 ns rr I = 50A, dl/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 150 nC rr Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25 is silicon limited 2. E is tested at starting Tj = 25 , L = 1.0mH, I = 28.0A, V = 10V. AS AS GS 2 Jun. 2013. Version 1.2 MagnaChip Semiconductor Ltd.