MDP1933TH Magnachip

MDP1933 Single N-Channel Trench MOSFET 80V MDP1933 Single N-channel Trench MOSFET 80V, 105A, 7.0m General Description Features The MDP1933 uses advanced MagnaChip s MOSFET V = 80V DS Technology, which provides high performance in on-state ID = 105A VGS = 10V resistance, fast switching performance and excellent R DS(ON) quality. MDP1933 is suitable device for Synchronous < 7.0 m V = 10V GS Rectification For Server and general purpose applications. 100% UIL Tested 100% Rg Tested D G S TO-220 o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 80 V DSS Gate-Source Voltage V 20 V GSS o T =25 C (Silicon Limited) 105 C (1) Continuous Drain Current I D o T =100 C 67 A C Pulsed Drain Current IDM 420 o T =25 C 157 C Power Dissipation P W D o T =100 C 63 C (2) Single Pulse Avalanche Energy E 144.5 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient R 62.5 JA o C/W Thermal Resistance, Junction-to-Case R 0.8 JC 1 Jun. 2014. Version 1.0 MagnaChip Semiconductor Ltd. MDP1933 Single N-Channel Trench MOSFET 80V Ordering Information Part Number Temp. Range Package Packing RoHS Status o MDP1933TH -55~150 C TO-220 Tube Halogen Free o Electrical Characteristics (T =25 C) J Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 80 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 2.0 - 4.0 GS(th) DS GS D Drain Cut-Off Current I V = 64V, V = 0V - - 1.0 DSS DS GS A Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS Drain-Source ON Resistance R V = 10V, I = 50A - 5.5 7.0 m DS(ON) GS D Forward Transconductance g V = 10V, I = 50A - 47 - S fs DS D Dynamic Characteristics Total Gate Charge Q - 59.4 - g V = 40V, I = 50A, DS D Gate-Source Charge Q - 16.5 - nC gs V = 10V GS Gate-Drain Charge Qgd - 12.3 - Input Capacitance C - 3,841 - iss V = 40V, V = 0V, DS GS Reverse Transfer Capacitance C - 34.2 - pF rss f = 1.0MHz Output Capacitance C - 651.7 - oss Turn-On Delay Time t - 15.6 - d(on) Rise Time t - 32.7 - r V = 10V, V = 40V, GS DS ns I = 50A , R = 3.0 D G Turn-Off Delay Time t - 24.2 - d(off) Fall Time t - 15.1 - f Gate Resistance Rg f=1 MHz - 2.5 - Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 50A, V = 0V - 0.9 1.2 V SD S GS Body Diode Reverse Recovery Time t - 64.3 ns rr I = 50A, dl/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 152.7 nC rr Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25 is silicon limited 2. E is tested at starting Tj = 25 , L = 1.0mH, I = 17.0A, V = 10V. AS AS GS 2 Jun. 2014. Version 1.0 MagnaChip Semiconductor Ltd.