Product Information

MI5809

MI5809 electronic component of Megapower

Datasheet
MOSFET N Trench 20V 300mA 1V @ 250uA 250 mΩ @ 500mA,4.5V DFN_3x2mm RoHS

Manufacturer: Megapower
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MI5809
Megapower

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The Megapower MI5809 is an advanced N-channel MOSFET with a Trench 20V structure and a maximum drain current of 300mA with a breakdown voltage of 1V @ 250uA. It also consists of a 250 mΩ Ron @ 500 mA, making it an efficient power device with low on-state resistance and good performance. The device is available in a 4.5V DFN_3x2mm RoHS package, making it suitable for a wide range of applications. Furthermore, it is RoHS compliant, making it very ecofriendly.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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