1N4148UR-1 Qualified Levels: Glass MELF Switching Diode JAN, JANTX, and Available on JANTXV commercial Qualified per MIL-PRF-19500/116 versions DESCRIPTION This popular 1N4148UR-1 JEDEC registered switching/signal diode features internal metallurgical bonded construction for military grade products per MIL-PRF-19500/116. Previously listed as a CDLL4148 this small low capacitance diode, with very fast switching speeds, is hermetically sealed and bonded into a double-plug DO-213AA package. It may be used in a variety of very high speed applications including switchers, detectors, transient OR ing, logic arrays, blocking, as well as low-capacitance steering diodes, etc. Microsemi also offers a variety of other switching/signal diodes. DO-213AA Important: For the latest information, visit our website 1N4148UR-1 MECHANICAL and PACKAGING CASE: Hermetically sealed glass case package. TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per MIL-STD-750, method 2026. POLARITY: Cathode end is banded. MOUNTING: The axial coefficient of expansion (COE) of this device is approximately +6PPM/C. The COE of the mounting surface system should be selected to provide a suitable match with this device. MARKING: Part number. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: 0.2 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N4148 UR -1 (e3) Reliability Level RoHS Compliance JAN = JAN level e3 = RoHS compliant (on JANTX = JANTX level commercial grade only) JANTXV = JANTXV level Blank = non-RoHS compliant See 1N6642US for JANS level Blank = Commercial grade Metallurgically Bonded JEDEC type number MELF Surface Mount (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition I Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. R Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave I O input and a 180 degree conduction angle. t Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from rr the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. V Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum F value). V Reverse Voltage: The reverse voltage dc value, no alternating component. R Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range V RWM excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV. ELECTRICAL CHARACTERISTICS 25 C unless otherwise noted FORWARD FORWARD REVERSE FORWARD REVERSE REVERSE REVERSE REVERSE CAPACI- CAPACI- VOLTAGE VOLTAGE RECOVERY RECOVERY CURRENT CURRENT CURRENT CURRENT TANCE TANCE V V TIME TIME I 20 V I 75 V I I C C F1 F2 R1 R2 R3 R4 I =10 mA I =100 mA t t 20 V 75 V (Note 3) (Note 4) F F rr fr o o (Note 1) (Note 2) T =150 C T =150 C A A V V ns ns nA A A A pF pF 0.8 1.2 5 20 25 0.5 35 75 4.0 2.8 NOTE 1: I = I = 10 mA, R = 100 Ohms. NOTE 3: V = 0 V, f = 1 MHz, V = 50 mV (pk to pk). F R L R SIG NOTE 2: I = 50 mA. NOTE 4: V = 1.5V, f = 1 MHz, V = 50 mV (pk to pk). F R SIG T4-LDS-0281-1, Rev. 1 (121567) 2012 Microsemi Corporation Page 2 of 4