Product Information

1N4607

1N4607 electronic component of Microchip

Datasheet
Diodes - General Purpose, Power, Switching Signal or Computer Diode
Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.438 ea
Line Total: USD 2.44

34 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

1N4607
Microchip

1 : USD 2.457

34 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

1N4607
Microchip

1 : USD 2.438
100 : USD 2.4265

3 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 4
Multiples : 1

Stock Image

1N4607
Microchip

4 : USD 2.457

Read More Specifications

     
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RoHS - XON
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Additional Infomation About Product

Silicon Switching Diode DO-35 Glass Package 1N4607 1N4150 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Lea d Dia . 0 .0 18-0 .0 22 Six sigma quality 0 .458-0.558 mm Metallurgically bonded BKC s Sigma Bond plating 1.0 Dia. for problem free solderability Length 25.4 mm 0.06-0.09 0.120-.200 3.05-5.08-mm (Min.) 1.53-2.28 mm Maximum Ratings Symbol Value Unit o Peak Inverse Voltage 5A & 0.1A -55 C PIV 85 (Min). Volts Average Rectified Current Iavg 200 mAmps Continuous Forward Current I 200 mAmps Fdc Peak Surge Current (t = 1 sec.) I 1.0 Amp peak peak o BKC Power Dissipation T =50 C, L = 3/8 from body P 500 mWatts L tot o Operating Temperature Range T -65 to +200 C Op o Storage Temperature Range T -65 to +200 C St o Electrical Characteristics 25 C* Symbol Minimum Maximum Unit Forward Voltage Drop I = 400 mA V *** 1.10 Volts F F Breakdown Voltage I = 25 A PIV 85 Volts R Reverse Leakage Current V = 50 V I 100 A R R Reverse Recovery time (note 1) t 10 nSecs rr Note 1: Per Method 4031-A with I = 10 mA,Vr = 6 V, R = 100 Ohms. * UNLESS OTHERWISE SPECIFIED F L 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 Silicon Switching Diode DO-35 Glass Package 1N4608 1N4150 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Lea d Dia . 0 .0 18-0 .0 22 Six sigma quality 0 .458-0.558 mm Metallurgically bonded BKC s Sigma Bond plating 1.0 Dia. for problem free solderability Length 0.06-0.09 25.4 mm 0.120-.200 3.05-5.08-mm (Min.) 1.53-2.28 mm Maximum Ratings Symbol Value Unit o Peak Inverse Voltage 5A & 0.1A -55 C PIV 85 (Min). Volts Average Rectified Current Iavg 200 mAmps Continuous Forward Current I 500 mAmps Fdc Peak Surge Current (t = 1 sec.) I 1.0 Amp peak peak o BKC Power Dissipation T =50 C, L = 3/8 from body P 500 mWatts L tot o Operating Temperature Range T -65 to +150 C Op o Storage Temperature Range T -65 to +150 C St o Electrical Characteristics 25 C* Symbol Minimum Maximum Unit Forward Voltage Drop I = 400 mA V *** 1.10 Volts F F Breakdown Voltage I = 25 A PIV 85 Volts R Reverse Leakage Current V = 50 V I 100 A R R Reverse Recovery time (note 1) t 10 nSecs rr Note 1: Per Method 4031-A with I = 10 mA,Vr = 6 V, R = 100 Ohms. * UNLESS OTHERWISE SPECIFIED F L 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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Microsemi Commercial Components Group
MICROSEMI COMMUNICATIONS INC.
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VECTRON INTL
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Vitesse / Microsemi

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