The 1N6075 is a bipolar junction transistor (BJT) manufactured by Microchip. The device is a high-leakage transistor and can be used in applications such as low-noise audio amplifiers, general switching, low-noise shunt regulators and transistor radio applications. The device features an encapsulated package with an isolated collector, an isolated emitter, and a base. It has a maximum collector-emitter voltage rating of 200V and a base-emitter voltage of 40V. The 1N6075 has a maximum collector current of 1A and a maximum power dissipation of 200mW.