Product Information

1N6155AUSJANTX-T/R

1N6155AUSJANTX-T/R electronic component of Microchip

Datasheet
Diode TVS Single Bi-Dir 27.4V 1.5KW 2-Pin G-MELF T/R

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 81.1059 ea
Line Total: USD 81.11

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 81.1059
10 : USD 74.8939

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Polarity
Breakdown Voltage
Clamping Voltage
Packaging
Brand
Leakage Current Max
Mounting
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Operating Temperature Classification
Peak Pulse Power Dissipation
Peak Pulse Current
Reverse Stand-Off Voltage
Test Current It
Rad Hardened
LoadingGif

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1N6103US 1N6137AUS WWW.Microsemi .COM 1N6139US 1N6173AUS 1N6103US thru 1N6137AUS and 1N6139US thru 1N6173AUS Voidless-Hermetically-Sealed Surface SCOTTSDALE DIVISION Mount Bidirectional Transient Suppressors DESCRIPTION APPEARANCE This surface mount series of industry recognized voidless-hermetically- Package E sealed Bidirectional Transient Voltage Suppressor (TVS) designs is (or D-5B) military qualified to MIL-PRF-19500/516 and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a Working Peak Standoff Voltage selection from 5.2 to 152 Volts with two package sizes for 500 W and 1500 W ratings. They are very robust in hard-glass construction and also use an internal metallurgical bond identified as Category I for high-reliability applications. Both of these are also military qualified to MIL-PRF-19500/516 and are available as both a non suffix part and an A suffix part involving different voltage tolerances as further Package G described in note 4 on page 2. These devices are also available in axial- (or D-5C) leaded packages for thru-hole mounting by deleting the US suffix (see separate data sheet for 1N6103 thru 1N6173A). Microsemi also offers numerous other TVS products to meet higher and lower peak pulse power and voltage ratings in both through-hole and surface-mount packages. IMPORTANT: For the most current data, consult MICROSEMIs website: 1N6103US 1N6137AUS WWW.Microsemi .COM 1N6139US 1N6173AUS 1N6103US thru 1N6137AUS and 1N6139US thru 1N6173AUS Voidless-Hermetically-Sealed Surface SCOTTSDALE DIVISION Mount Bidirectional Transient Suppressors ELECTRICAL CHARACTERISTICS INDUSTRY TYPE MINIMUM RATED MAXIMUM MAXIMUM MAXIMUM MAXIMUM NUMBER BREAKDOWN STANDOFF STANDBY CLAMPING PEAK PULSE TEMP. (Note 4) VOLTAGE VOLTAGE CURRENT VOLTAGE COEF. OF CURRENT I PP V I V I V V I V (BR) (BR) WM D WM C PP (BR) P Rating 500W 1500W 500 W 1500 W PP o 500W 1500W Volts mA Volts uA uA Volts Amps Amps %/ C 1N6103AUS 1N6139AUS 7.13 175 5.7 50 300 11.2 44.6 133.9 .06 1N6104AUS 1N6140AUS 7.79 150 6.2 20 100 12.1 41.3 124.0 .06 1N6105AUS 1N6141AUS 8.65 150 6.9 20 100 13.4 37.3 111.9 .06 1N6106AUS 1N6142AUS 9.50 125 7.6 20 100 14.5 34.5 103.4 .07 1N6107AUS 1N6143AUS 10.45 125 8.4 20 20 15.6 32.0 96.2 .07 1N6108AUS 1N6144AUS 11.40 100 9.1 20 20 16.9 29.6 88.8 .07 1N6109AUS 1N6145AUS 12.35 100 9.9 20 20 18.2 27.5 82.4 .08 1N6110AUS 1N6146AUS 14.25 75 11.4 20 20 21.0 23.8 71.4 .08 1N6111AUS 1N6147AUS 15.20 75 12.2 20 20 22.3 22.4 67.3 .08 1N6112AUS 1N6148AUS 17.10 65 13.7 1 10 25.1 19.9 59.8 .085 1N6113AUS 1N6149AUS 19.0 65 15.2 1 5 27.7 18.0 54.2 .085 1N6114AUS 1N6150AUS 20.9 50 16.7 1 5 30.5 16.4 49.2 .085 1N6115AUS 1N6151AUS 22.8 50 18.2 1 5 33.3 15.0 45.0 .09 1N6116AUS 1N6152AUS 25.7 50 20.6 1 5 37.4 13.4 40.1 .09 1N6117AUS 1N6153AUS 28.5 40 22.8 1 5 41.6 12.0 36.0 .09 1N6118AUS 1N6154AUS 31.4 40 25.1 1 5 45.7 10.9 32.8 .095 1N6119AUS 1N6155AUS 34.2 30 27.4 1 5 49.9 10.0 30.1 .095 1N6120AUS 1N6156AUS 37.1 30 29.7 1 5 53.6 9.3 28.0 .095 1N6121AUS 1N6157AUS 40.9 30 32.7 1 5 59.1 8.5 25.4 .095 1N6122AUS 1N6158AUS 44.7 25 35.8 1 5 64.6 7.7 23.2 .095 1N6123AUS 1N6159AUS 48.5 25 38.8 1 5 70.1 7.1 21.4 .095 1N6124AUS 1N6160AUS 53.2 20 42.6 1 5 77.0 6.5 19.5 .095 1N6125AUS 1N6161AUS 58.9 20 47.1 1 5 85.3 5.9 17.6 .100 1N6126AUS 1N6162AUS 64.6 20 51.7 1 5 97.1 5.1 15.4 .100 1N6127AUS 1N6163AUS 71.3 20 56.0 1 5 103.1 4.8 14.5 .100 1N6128AUS 1N6164AUS 77.9 15 62.2 1 5 112.8 4.4 13.3 .100 1N6129AUS 1N6165AUS 86.5 15 69.2 1 5 125.1 4.0 12.0 .100 1N6130AUS 1N6166AUS 95.0 12 76.0 1 5 137.6 3.6 10.9 .100 1N6131AUS 1N6167AUS 104.5 12 86.6 1 5 151.3 3.3 9.9 .100 1N6132AUS 1N6168AUS 114.0 10 91.2 1 5 165.1 3.0 9.1 .100 1N6133AUS 1N6169AUS 123.5 10 98.8 1 5 178.8 2.8 8.4 .105 1N6134AUS 1N6170AUS 142.5 8 114.0 1 5 206.3 2.4 7.3 .105 1N6135AUS 1N6171AUS 152.0 8 121.6 1 5 218.4 2.3 6.9 .105 1N6136AUS 1N6172AUS 171.0 5 136.8 1 5 245.7 2.0 6.1 .110 1N6137AUS 1N6173AUS 190.0 5 152.0 1 5 273.0 1.8 5.5 .110 Note: 4 1 1 1 2 3 1 2 3 1 Notes: 1. Applies to both 500W and 1500W series for devices shown (see note 4) 2. Applies only to 500W series (1N6103US thru 1N6137US) 3. Applies only to 1500W series (1N6139US thru 1N6173AUS) 4. Part number without the A suffix has 5% higher V , 5% lower minimum V , and 5% lower I . C (BR) PP SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. BR Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range. V WM This is also referred to as Standoff Voltage. I Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature. D V Maximum clamping voltage at specified I (Peak Pulse Current) at the specified pulse conditions. C PP Peak Pulse Power: The peak power dissipation resulting from the peak impulse current I . P PP PP Copyright 2008 Microsemi Page 2 05-06-2008 REV D Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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