WWW.Microsemi .COM 1N6626US 1N6631US 1N6626US thru 1N6631US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT ULTRA FAST SCOTTSDALE DIVISION RECOVERY GLASS RECTIFIERS DESCRIPTION APPEARANCE This Ultrafast Recovery rectifier diode series is military qualified to MIL-PRF- 19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless- glass construction using an internal Category I metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting (see separate data sheet for 1N6626 thru 1N6631). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole Package E and surface mount packages. or D-5B IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM 1N6626US 1N6631US 1N6626US thru 1N6631US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT ULTRA FAST SCOTTSDALE DIVISION RECOVERY GLASS RECTIFIERS o ELECTRICAL CHARACTERISTICS 25 C TYPE MINIMUM MAXIMUM WORKING MAXIMUM MAXIMUM MAXIMUM PEAK FORWARD NUMBER BREAK- FORWARD PEAK REVERSE REVERSE REVERSE RECOVERY RECOVERY DOWN VOLTAGE REVERSE RECOVERY RECOVERY CURRENT VOLTAGE CURRENT I R VOLTAGE VOLTAGE TIME (LOW TIME (HIGH I (rec) V I RM V Max F F V FRM RWM CURRENT) CURRENT) V V I = 2 A, R RWM F I = 0.5 A F o o I = 50 A t t 100 A/ s R T =25 C T =150 C rr rr A A t = 12 ns r Note 1 Note 2 Note 2 V V A V A V ns ns A V A A 1N6626US 220 1.35V 2.0 A 1.50V 4.0 A 200 2.0 500 30 45 3.5 8 1N6627US 440 1.35V 2.0 A 1.50V 4.0 A 400 2.0 500 30 45 3.5 8 1N6628US 660 1.35V 2.0 A 1.50V 4.0 A 600 2.0 500 30 45 3.5 8 1N6629US 880 1.40V 1.4 A 1.70V 3.0 A 800 2.0 500 50 60 4.2 12 1N6630US 990 1.40V 1.4 A 1.70V 3.0 A 900 2.0 500 50 60 4.2 12 1N6631US 1100 1.60V 1.4 A 1.95V 2.0 A 1000 4.0 600 60 80 5.0 20 NOTE 1: Low Current Reverse Recovery Time Test Conditions: I =0.5A, I =1.0A, I = 0.25A per MIL-STD-750, F RM R(REC) Method 4031, Condition B. NOTE 2: High Current Reverse Recovery Time Test Conditions: I = 2 A, 100 A/s MIL-STD-750, Method 4031, F Condition D. SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. BR Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating V RWM temperature range. V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. F Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and I R temperature. C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. Reverse Recovery Time: The time interval between the instant the current passes through zero when t changing from the forward direction to the reverse direction and a specified recovery decay point after a peak rr reverse current is reached. CHARTS AND GRAPHS FIGURE 1 FIGURE 2 Typical Forward Current Typical Forward Current vs vs Forward Voltage Forward Voltage Copyright 2009 Microsemi Page 2 10-30-2009 REV G, SD53A Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503