Product Information

1N914UR

Name: 1N914UR
Brand: Microchip
SKU: 1N914UR_Microchip
Availability: OutOfStock
Rating: 5 (11 reviews)

1N914UR electronic component of Microchip

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Datasheet

Diodes - General Purpose, Power, Switching Signal or Computer Diode

Manufacturer: Microchip

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

848: USD 1.6714 ea
Line Total: USD 1417.35

0 - Global Stock

MOQ: 848 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 22 May to Tue. 28 May MOQ : 848 Multiples : 1 1N914UR Microchip	848 : USD 1.6714 8480 : USD 1.6005 84800 : USD 1.5685

0 - WHS 2 Ships to you between Tue. 28 May to Thu. 30 May MOQ : 1 Multiples : 1 1N914UR Microchip	1 : USD 2.2425 100 : USD 2.2425

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Additional Infomation About Product

1N914UR Qualified Levels: Glass MELF Switching Diode JAN, JANTX, and Available on JANTXV commercial Qualified per MIL-PRF-19500/116 version DESCRIPTION This popular 1N914UR JEDEC registered switching/signal diode features internal metallurgical bonded construction for military grade products per MIL-PRF-19500/116. Previously listed as a CDLL914 this small low capacitance diode, with very fast switching speeds, is hermetically sealed and bonded into a double-plug DO-213AA package. It may be used in a variety of very high speed applications including switchers, detectors, transient OR ing, logic arrays, blocking, as well as low-capacitance steering diodes, etc. Microsemi also offers a variety of other switching/signal diodes. DO-213AA Important: For the latest information, visit our website 1N914UR MECHANICAL and PACKAGING CASE: Hermetically sealed glass case package. TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per MIL-STD-750, method 2026. POLARITY: Cathode end is banded. MOUNTING: The axial coefficient of expansion (COE) of this device is approximately +6PPM/C. The COE of the mounting surface system should be selected to provide a suitable match with this device. MARKING: Part number. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: 0.2 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N914 UR (e3) Reliability Level RoHS Compliance JAN = JAN level e3 = RoHS compliant (on JANTX = JANTX level commercial grade only) JANTXV = JANTXV level Blank = non-RoHS compliant Blank = Commercial grade MELF Surface Mount JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition I Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. R Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave I O input and a 180 degree conduction angle. t Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from rr the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. V Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum F value). V Reverse Voltage: The reverse voltage dc value, no alternating component. R Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range V RWM excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV. ELECTRICAL CHARACTERISTICS 25 C unless otherwise noted FORWARD FORWARD REVERSE FORWARD REVERSE REVERSE REVERSE REVERSE CAPACI- CAPACI- VOLTAGE VOLTAGE RECOVERY RECOVERY CURRENT CURRENT CURRENT CURRENT TANCE TANCE V V TIME TIME I 20 V I 75 V I I C C F1 F2 R1 R2 R3 R4 I =10 mA I =50 mA t t 20 V 75 V (Note 3) (Note 4) F F rr fr o o (Note 1) (Note 2) T =150 C T =150 C A A V V ns ns nA A A A pF pF 0.8 1.2 5 20 25 0.5 35 75 4.0 2.8 NOTE 1: I = I = 10 mA, R = 100 Ohms. NOTE 3: V = 0 V, f = 1 MHz, V = 50 mV (pk to pk). F R L R SIG NOTE 2: I = 50 mA. NOTE 4: V = 1.5V, f = 1 MHz, V = 50 mV (pk to pk). F R SIG T4-LDS-0279-1, Rev. 1 (121565) 2012 Microsemi Corporation Page 2 of 4

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Microchip may also be referenced as

AT9
ATM
Atmel
Atmel Wireless (VA)
M4S
M6S
M8S
M9S
MCP
Micrel
Micrel Inc
MICREL SEMICONDUCTOR
MICREL SYNERGY SEMI
MICROCHIP (ATMEL)
MICROCHIP (MICREL)
MICROCHIP (MICROSEMI)
MICROCHIP (SUPERTEX)
Microchip / Microsemi
Microchip / Vectron
Microchip Tech
MICROCHIP TECH.
Microchip Technology
Microchip Technology Micrel
Microchip Technology / Atmel
Microchip Technology / Micrel
MICROCHIPDIRECT
MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
Microsemi Commercial Components Group
MICROSEMI COMMUNICATIONS INC.
Microsemi Consumer Medical Product Group
Microsemi Corporation
Microsemi FTD
Microsemi Power Management Group
Microsemi Power Products Group
Microsemi SoC
MICROSEMI/LAWRENCE
MICROSEMI/LINFINITY
MSC
Roving Networks
ROVING NETWORKS INC
ROVING NETWORKS INC.
ROVING NETWORKS, INC.
Silicon Storage
SILICON STORAGE TECH
SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi

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