Product Information

23K640-EP

23K640-EP electronic component of Microchip

Datasheet
Microchip Technology SRAM 64K 8K X 8 2.7V SERIAL SRAM EXT

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5352 ea
Line Total: USD 1.5352

335 - Global Stock
Ships to you between
Fri. 06 Oct to Tue. 10 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
324 - Global Stock


Ships to you between Fri. 06 Oct to Tue. 10 Oct

MOQ : 1
Multiples : 1

Stock Image

23K640-EP
Microchip

1 : USD 1.215
25 : USD 1.0875
120 : USD 1.025

     
Manufacturer
Microchip
Product Category
SRAM
RoHS - XON
Y Icon ROHS
Memory Size
64 kb it
Organization
8 K X 8
Access Time
-
Maximum Clock Frequency
20 MHz
Interface Type
Serial, 4 - Wire, Sdi, Spi
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
PDIP - 8
Packaging
Tube
Supply Current - Max
10 mA
Data Rate
Sdr
Memory Type
Sdr
Type
Synchronous
Brand
Microchip
Factory Pack Quantity :
60
Series
23K640
Number Of Ports
1
Cnhts
8542319000
Hts Code
8542320051
Mxhts
85423199
Product Type
Sram
Subcategory
Memory & Data Storage
Taric
8542319000
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23A640/23K640 64K SPI Bus Low-Power Serial SRAM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 23K640 2.7-3.6V 32 Byte I, E P, SN, ST 23A640 1.5-1.95V 32 Byte I P, SN, ST Features: Description: Max. Clock 20 MHz The Microchip Technology Inc. 23X640 are 64 Kbit Serial SRAM devices. The memory is accessed via a Low-Power CMOS Technology: simple Serial Peripheral Interface (SPI) compatible - Read Current: 3 mA at 1 MHz serial bus. The bus signals required are a clock input - Standby Current: 4 A Max. at +85C (SCK) plus separate data in (SI) and data out (SO) 8192 x 8-bit Organization lines. Access to the device is controlled through a Chip 32-Byte Page Select (CS) input. HOLD pin Communication to the device can be paused via the Flexible Operating modes: hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the - Byte read and write exception of Chip Select, allowing the host to service - Page mode (32 Byte Page) higher priority interrupts. - Sequential mode The 23X640 is available in standard packages Sequential Read/Write including 8-lead PDIP and SOIC, and advanced High Reliability packaging including 8-lead TSSOP. Temperature Ranges Supported: - Industrial (I): -40C to +85C Package Types (not to scale) -40C to +125C - Automotive (E): Pb-Free and RoHS Compliant, Halogen Free Pin Function Table Name Function PDIP/SOIC/TSSOP CS Chip Select Input (P, SN, ST) SO Serial Data Output SS Ground V CS 1 8 VCC SI Serial Data Input SO 2 7 HOLD SCK Serial Clock Input NC 3 6 SCK HOLD Hold Input VSS 4 5 SI VCC Supply Voltage 2008-2011 Microchip Technology Inc. DS22126E-page 123A640/23K640 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................4.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.3V to VCC +0.3V Storage temperature .................................................................................................................................-65C to 150C Ambient temperature under bias...............................................................................................................-40C to 125C ESD protection on all pins...........................................................................................................................................2kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C DC CHARACTERISTICS Automotive (E): TA = -40C to +125C Param. (1) Sym. Characteristic Min. Typ Max. Units Test Conditions No. D001 VCC Supply voltage 1.5 1.95 V 23A640 (I-Temp) D001 VCC Supply voltage 2.7 3.6 V 23K640 (I, E-Temp) D002 VIH High-level input .7 VCC VCC +0.3 V voltage D003 VIL Low-level input -0.3 0.2xVCC V voltage 0.15xVCC V 23K640 (E-Temp) D004 VOL Low-level output 0.2 VIOL = 1 mA voltage D005 VOH High-level output VCC -0.5 V IOH = -400 A voltage D006 ILI Input leakage 0.5 ACS = VCC, VIN = VSS OR VCC current D007 ILO Output leakage 0.5 ACS = VCC, VOUT = VSS OR VCC current D008 ICC Read 3 mA FCLK = 1 MHz SO = O 6 mA FCLK = 10 MHz SO = O Operating current 10 mA FCLK = 20 MHz SO = O D009 ICCS 0.2 1 A CS = VCC = 1.8V, Inputs tied to Standby current VCC or VSS 1 4 A CS = VCC = 3.6V, Inputs tied to VCC or VSS 5 10 A CS = VCC = 3.6V, Inputs tied to VCC or VSS 125C D010 CINT Input capacitance 7 pF VCC = 0V, f = 1 MHz, Ta = 25C (Note 1) D011 VDR RAM data retention 1.2 V (2) voltage Note 1: This parameter is periodically sampled and not 100% tested. Typical measurements taken at room temperature (25C). 2: This is the limit to which VDD can be lowered without losing RAM data. This parameter is periodically sampled and not 100% tested. DS22126E-page 2 2008-2011 Microchip Technology Inc.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
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