23LC1024-ESN

23A1024/23LC1024 1Mbit SPI Serial SRAM with SDI and SQI Interface Device Selection Table Part Temp. Dual I/O Quad I/O Max. Clock VCC Range Packages Number Ranges (SDI) (SQI) Frequency (1) 23A1024 1.7-2.2V I, E Yes Yes 20 MHz SN, ST, P (1) 23LC1024 2.5-5.5V I, E Yes Yes 20 MHz SN, ST, P Note 1: 16 MHz for E-temp. Features Description SPI Bus Interface: The Microchip Technology Inc. 23A1024/23LC1024 are 1 Mbit Serial SRAM devices. The memory is - SPI compatible accessed via a simple Serial Peripheral Interface (SPI) - SDI (dual) and SQI (quad) compatible compatible serial bus. The bus signals required are a - 20 MHz Clock rate for all modes clock input (SCK), a data in line (SI) and a data out line Low-Power CMOS Technology: (SO). Access to the device is controlled through a Chip - Read Current: 3 mA at 5.5V, 20 MHz Select (CS) input. Additionally, SDI (Serial Dual Interface) and SQI (Serial Quad Interface) is supported - Standby Current: 4 A at +85C if your application needs faster data rates. Unlimited Read and Write Cycles This device also supports unlimited reads and writes to Zero Write Time the memory array. 128K x 8-bit Organization: The 23A1024/23LC1024 is available in standard - 32-byte page packages including 8-lead SOIC, PDIP and advanced Byte, Page and Sequential Mode for Reads and 8-lead TSSOP. Writes High Reliability Package Types (not to scale) Temperature Ranges Supported: - Industrial (I): -40Cto +85C - Automotive (E): -40C to +125C RoHS Compliant SOIC/TSSOP/PDIP 8 Lead SOIC, TSSOP and PDIP Packages CS 1 8 VCC SO/SIO1 2 7 HOLD/SIO3 Pin Function Table SIO2 3 6 SCK Name Function VSS 4 5 SI/SIO0 CS Chip Select Input Pin SO/SIO1 Serial Output/SDI/SQI Pin SIO2 SQI Pin VSS Ground Pin SI/SIO0 Serial Input/SDI/SQI Pin SCK Serial Clock Pin HOLD/SIO3 Hold/SQI Pin VCC Power Supply Pin 2012-2015 Microchip Technology Inc. DS20005142C-page 123A1024/23LC1024 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V All Inputs and Outputs w.r.t. VSS ........................................................................................................ -0.3V to VCC +0.3V Storage Temperature...............................................................................................................................-65C to +150C Ambient Temperature under Bias............................................................................................................-40C to +125C NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C DC CHARACTERISTICS Automotive (E): TA = -40C to +125C Param. (3) Sym. Characteristic Min. Typ. Max. Units Test Conditions No. D001 VCC Supply Voltage 1.7 2.2 V 23A1024 2.5 5.5 V 23LC1024 D002 VIH High-level Input 0.7VCC VCC + 0.3 V Voltage D003 VIL Low-level Input -0.3 0.2 VCC V 23A1024 Voltage 0.1 VCC V 23LC1024 D004 VOL Low-level Output 0.2 VIOL = 1 mA Voltage D005 VOH High-level Output VCC - 0.5 V IOH = -400 A Voltage ILI Input Leakage 1 A D006 CS = VCC, VIN = VSS OR VCC Current ILO Output Leakage 1 A D007 CS = VCC, VOUT = VSS OR VCC Current D008 ICC Read Operating Current 1 10 mA FCLK = 20 MHz SO = O, 2.2V 310 mAFCLK = 20 MHz SO = O, 5.5V CCS Standby Current 1 4 A I D009 CS = VCC = 2.2V, Inputs tied to VCC or VSS, I-Temp 12 A CS = VCC = 2.2V, Inputs tied to VCC or VSS, E-Temp 410 A CS = VCC = 5.5V, Inputs tied to VCC or VSS, I-Temp 20 A CS = VCC = 5.5V, Inputs tied to VCC or VSS, E-Temp D010 CINT Input Capacitance 7 pF VCC = 5.0V, f = 1 MHz, T =25C A (Note 1) VDR RAM Data Retention 1.0 V D011 (Note 2) Voltage Note 1: This parameter is periodically sampled and not 100% tested. CC can be lowered without losing RAM data. This parameter is periodically 2: This is the limit to which V sampled and not 100% tested. 3: Typical measurements taken at room temperature. DS20005142C-page 2 2012-2015 Microchip Technology Inc.