Product Information

24FC1025-I/SM

24FC1025-I/SM electronic component of Microchip

Datasheet
Memory; EEPROM; I2C; 128kx8bit; 1.8÷5.5V; 1MHz; SO8

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.324 ea
Line Total: USD 4.32

842 - Global Stock
Ships to you between
Mon. 20 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
756 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 5
Multiples : 5

Stock Image

24FC1025-I/SM
Microchip

5 : USD 5.3375
90 : USD 4.425
180 : USD 4.4
270 : USD 4.375
540 : USD 4.3625
1080 : USD 4.3375
2520 : USD 4.3125
5040 : USD 4.2875

67 - WHS 2


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 1
Multiples : 1

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24FC1025-I/SM
Microchip

1 : USD 4.5399
25 : USD 4.5399

842 - WHS 3


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

24FC1025-I/SM
Microchip

1 : USD 4.324
25 : USD 4.255
90 : USD 4.163

756 - WHS 4


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 15
Multiples : 5

Stock Image

24FC1025-I/SM
Microchip

15 : USD 5.4894
90 : USD 5.3791
180 : USD 5.2715

909 - WHS 5


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 8
Multiples : 1

Stock Image

24FC1025-I/SM
Microchip

8 : USD 5.0744
10 : USD 5.0531

     
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24AA1025/24LC1025/24FC1025 2 1024K I C CMOS Serial EEPROM This device is capable of both random and sequential Device Selection Table: reads. Reads may be sequential within address bound- Part VCC Max. Clock Temp aries 0000h to FFFFh and 10000h to 1FFFFh. Number Range Frequency Ranges Functional address lines allow up to four devices on the same data bus. This allows for up to 4 Mbits total 24AA1025 1.7-5.5V 400 kHz I system EEPROM memory. This device is available in 24LC1025 2.5-5.5V 400 kHz* I, E the standard 8-pin PDIP and SOIJ packages. 24FC1025 2.5-5.5V 1 MHz I 100 kHz for VCC < 2.5V. Package Type *100 kHz for VCC < 4.5V, E-temp. PDIP A0 1 8 VCC Features: A1 2 7 WP Single supply with operation down to 1.7V for A2 3 6 SCL 24AAXX devices, 2.5V for 24LCXX devices Low-power CMOS technology: VSS 4 5 SDA - Read current 1 mA, typical - Standby current 100 nA, typical SOIJ 2 2-wire serial interface, I C compatible 1 8 A0 VCC Cascadable up to four devices 2 7 A1 WP Schmitt Trigger inputs for noise suppression 3 6 Output slope control to eliminate ground bounce A2 SCL 100 kHz and 400 kHz clock compatibility 4 5 VSS SDA 1 MHz clock for FC versions Page write time 3 ms, typical Self-timed erase/write cycle Block Diagram 128-byte page write buffer Hardware write-protect A0 A1 WP HV Generator ESD protection >400V More than 1 million erase/write cycles Data retention >200 years I/O Memory EEPROM Control Control XDEC Array Factory programming available Logic Logic Packages include 8-lead PDIP, SOIJ Page Latches Pb-free and RoHS compliant I/O Temperature ranges: SCL YDEC - Industrial (I): -40C to +85C SDA - Automotive (E):-40C to +125C VCC Description: Sense AMP VSS R/W Control The Microchip Technology Inc. 24AA1025/24LC1025/ 24FC1025 (24XX1025*) is a 128K x 8 (1024K bit) Serial Electrically Erasable PROM, capable of opera- tion across a broad voltage range (1.8V to 5.5V). It has been developed for advanced, low-power applications such as personal communications or data acquisition. *24XX1025 is used in this document as a generic part number This device has both byte write and page write for the 24AA1025/24LC1025/24FC1025 devices. capability of up to 128 bytes of data. 2007 Microchip Technology Inc. Preliminary DS21941E-page 124AA1025/24LC1025/24FC1025 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied................................................................................................-40C to +125C ESD protection on all pins ...................................................................................................................................................... 4kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): VCC = +1.7V to 5.5V TA = -40C to +85C DC CHARACTERISTICS Automotive (E): VCC = +2.5V to 5.5VTA = -40C to +125C Param. Sym. Characteristic Min. Max. Units Conditions No. D1 A0, A1, SCL, SDA and WP pins: IH High-level input voltage 0.7 VCC V D2 V D3 VIL Low-level input voltage 0.3 VCC V VCC 2.5V 0.2 VCC V VCC < 2.5V D4 VHYS Hysteresis of Schmitt CC VVCC 2.5V (Note) 0.05 V Trigger inputs (SDA, SCL pins) D5 VOL Low-level output voltage 0.40 V IOL = 3.0 mA VCC = 4.5V IOL = 2.1 mA VCC = 2.5V D6 ILI Input leakage current 1 AVIN = VSS or VCC, WP = VSS VIN = VSS or VCC, WP = VCC D7 ILO Output leakage current 1 AVOUT = VSS or VCC D8 CIN, Pin capacitance 10 pFVCC = 5.0V (Note) COUT (all inputs/outputs) TA = 25C, FCLK = 1 MHz D9 ICC Read Operating current 450 AVCC = 5.5V, SCL = 400 kHz ICC Write 5 mA VCC = 5.5V D10 ICCS Standby current 5 ATA = -40C to 85C SCL = SDA = VCC = 5.5V A0, A1, WP = VSS, A2 = VCC Note: This parameter is periodically sampled and not 100% tested. DS21941E-page 2 Preliminary 2007 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
AT9
ATM
Atmel
Atmel Wireless (VA)
M4S
M6S
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M9S
MCP
Micrel
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Microchip / Microsemi
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Microchip Tech
MICROCHIP TECH.
Microchip Technology
Microchip Technology Micrel
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Microchip Technology / Micrel
MICROCHIPDIRECT
MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
Microsemi Commercial Components Group
MICROSEMI COMMUNICATIONS INC.
Microsemi Consumer Medical Product Group
Microsemi Corporation
Microsemi FTD
Microsemi Power Management Group
Microsemi Power Products Group
Microsemi SoC
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MSC
Roving Networks
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ROVING NETWORKS INC.
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Silicon Storage
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SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
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Vitesse Microsemi
Vitesse / Microsemi

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