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25AA160D-E/MS

25AA160D-E/MS electronic component of Microchip

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EEPROM 16K 2K X 8 32B PAGE 1.8V SER EE EXT

Manufacturer: Microchip
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25AA160D-E/MS
Microchip

1 : USD 0.8946
25 : USD 0.8946
100 : USD 0.8946
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25AA160C/D, 25LC160C/D 16K SPI Bus Serial EEPROM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 25LC160C 2.5-5.5V 16 Byte I,E P, SN, ST, MS, MN 25AA160C 1.8-5.5V 16 Byte I P, SN, ST, MS, MN 25LC160D 2.5-5.5V 32 Byte I,E P, SN, ST, MS, MN 25AA160D 1.8-5.5V 32 Byte I, E P, SN, ST, MS, MN Description: Features: The Microchip Technology Inc. 25AA160C/D, Max. Clock 10 MHz * 25LC160C/D (25XX160C/D) are 16 Kbit Serial Low-Power CMOS Technology: Electrically Erasable PROMs. The memory is accessed - Max. write current: 5 mA at 5.5V via a simple Serial Peripheral Interface (SPI) - Read current: 5 mA at 5.5V, 10 MHz compatible serial bus. The bus signals required are a - Standby current: 5 uA at 5.5V clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled 2048 x 8-bit Organization through a Chip Select (CS) input. 16-Byte Page (C version devices) Communication to the device can be paused via the 32-Byte Page (D version devices) hold pin (HOLD). While the device is paused, transi- Self-Timed Erase and Write Cycles (5 ms max.) tions on its inputs will be ignored, with the exception of Block Write Protection: Chip Select, allowing the host to service higher priority - Protect none, 1/4, 1/2 or all of array interrupts. Built-In Write Protection: The 25XX160C/D is available in standard packages - Power-on/off data protection circuitry including 8-lead PDIP and SOIC, and advanced - Write enable latch packaging including 8-lead MSOP, TSSOP, and 2x3 TDFN. All packages are Pb-free and RoHS compliant. - Write-protect pin Sequential Read Package Types (not to scale) High Reliability: - Endurance: > 1M erase/write cycles TSSOP/MSOP PDIP/SOIC - Data retention: > 200 years (ST, MS) (P, SN) - ESD protection: > 4000V 1 8 VCC CS CS 1 8 VCC 2 7 SO Temperature Ranges Supported: HOLD SO 2 7 HOLD 6 3 WP SCK - Industrial (I): -40Cto +85C 4 5 VSS SI WP 3 6 SCK - Automotive (E): -40C to +125C VSS 4 5 SI Pb-Free and RoHS Compliant TDFN (MN) CS 1 8 VCC SO 2 7 HOLD WP 3 6 SCK 4 VSS 5 SI *25XX160C/D is used in this document as a generic part number for the 25AA160C/D, 25LC160C/D devices. 2009-2013 Microchip Technology Inc. DS22150B-page 125XX160C/D 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS .......................................................................................................... -0.6V to VCC+1.0V Storage temperature .................................................................................................................................-65C to 150C Ambient temperature under bias...............................................................................................................-40C to 125C ESD protection on all pins..........................................................................................................................................4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C VCC = 1.8V to 5.5V DC CHARACTERISTICS Automotive (E): TA = -40C to +125C VCC = 1.8V to 5.5V Param. Sym. Characteristic Min. Max. Units Test Conditions No. D001 VIH1 High-level input 0.7 VCC VCC+1 V voltage D002 VIL1 Low-level input -0.3 0.3 VCC VVCC 2.7V voltage D003 VIL2 -0.3 0.2 VCC VVCC < 2.7V D004 VOL1 Low-level output 0.4 VIOL = 2.1 mA voltage D005 VOL2 0.2 VIOL = 1.0 mA, VCC < 2.5V D006 VOH High-level output VCC-0.5 V IOH = -400 A voltage D007 ILI Input leakage current 1 ACS = VCC, VIN = VSS OR VCC D008 ILO Output leakage 1 ACS = VCC, VOUT = VSS OR VCC current D009 CINT Internal Capacitance A = 25C, CLK = 1.0 MHz, 7 pFT (all inputs and VCC = 5.0V (Note) outputs) D010 ICC Read 5 mA VCC = 5.5V FCLK = 10.0 MHz SO = Open Operating Current 2.5 mA VCC = 2.5V FCLK = 5.0 MHz SO = Open D011 ICC Write 5 mA VCC = 5.5V 3 mA VCC = 2.5V D012 ICCS 5 A CS = VCC = 5.5V, Inputs tied to VCC or Standby Current VSS, +125C 1 A CS = VCC = 5.5V, Inputs tied to VCC or VSS, +85C Note: This parameter is periodically sampled and not 100% tested. DS22150B-page 2 2009-2013 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
AT9
ATM
Atmel
Atmel Wireless (VA)
M4S
M6S
M8S
M9S
MCP
Micrel
Micrel Inc
MICREL SEMICONDUCTOR
MICREL SYNERGY SEMI
MICROCHIP (ATMEL)
MICROCHIP (MICREL)
MICROCHIP (MICROSEMI)
MICROCHIP (SUPERTEX)
Microchip / Microsemi
Microchip / Vectron
Microchip Tech
MICROCHIP TECH.
Microchip Technology
Microchip Technology Micrel
Microchip Technology / Atmel
Microchip Technology / Micrel
MICROCHIPDIRECT
MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
Microsemi Commercial Components Group
MICROSEMI COMMUNICATIONS INC.
Microsemi Consumer Medical Product Group
Microsemi Corporation
Microsemi FTD
Microsemi Power Management Group
Microsemi Power Products Group
Microsemi SoC
MICROSEMI/LAWRENCE
MICROSEMI/LINFINITY
MSC
Roving Networks
ROVING NETWORKS INC
ROVING NETWORKS INC.
ROVING NETWORKS, INC.
Silicon Storage
SILICON STORAGE TECH
SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi

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