Product Information

25LC640AT-I/ST

25LC640AT-I/ST electronic component of Microchip

Datasheet
Microchip Technology EEPROM 64K 8K X 8 25V SER EE IND

Manufacturer: Microchip
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Price (USD)

1: USD 0.8453 ea
Line Total: USD 0.85

2370 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2425 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

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25LC640AT-I/ST
Microchip

1 : USD 0.9047
10 : USD 0.9023
25 : USD 0.9
100 : USD 0.8976
250 : USD 0.8796
500 : USD 0.8796
1000 : USD 0.8796

2370 - WHS 2


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

25LC640AT-I/ST
Microchip

1 : USD 0.8453
25 : USD 0.8372
100 : USD 0.8372
250 : USD 0.8372
5000 : USD 0.8372

     
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25AA640A/25LC640A 64K SPI Bus Serial EEPROM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 25AA640A 1.8V-5.5V 32 Bytes I, E MF, MS, P, SN, MNY, ST 25LC640A 2.5V-5.5V 32 Bytes I, E MF, MS, P, SN, MNY, ST Communication to the device can be paused via the Features hold pin (HOLD). While the device is paused, transi- Maximum Clock 10 MHz tions on its inputs will be ignored, with the exception of Low-Power CMOS Technology: Chip Select, allowing the host to service higher priority interrupts. - Maximum Write current: 5 mA at 5.5V, 10 MHz Note 1: 25XX640A is used in this document as a - Read current: 5 mA at 5.5V, 10 MHz generic part number for the 25AA640A - Standby current: 1 A at 5.5V and 25LC640A devices. 8192 x 8-Bit Organization 32-Byte Page Packages Self-Timed Erase and Write Cycles 8-Lead DFN (5 ms maximum) 8-Lead MSOP Block Write Protection: 8-Lead PDIP - Protect none, 1/4, 1/2 or all of array 8-Lead SOIC Built-In Write Protection: 8-Lead TDFN - Power-on/off data protection circuitry 8-Lead TSSOP - Write enable latch - Write-protect pin Package Types (not to scale) Sequential Read High Reliability: 8-Lead PDIP/SOIC - Endurance: 1,000,000 erase/write cycles 8-Lead DFN/TDFN - Data retention: > 200 years CS 1 8 VCC 1 CS 8 VCC SO 2 7 HOLD - ESD protection: > 4000V 2 7 SO HOLD WP 3 6 SCK 3 6 SCK RoHS Compliant WP VSS 4 5 SI VSS 4 5 SI Temperature Ranges Supported: - Industrial (I): -40Cto +85C - Extended (E): -40C to +125C Automotive AEC-Q100 Qualified 8-Lead MSOP/TSSOP X-Rotated TSSOP CS 1 8 VCC 1 8 SCK HOLD SO 2 7 VCC 2 7 SI Description HOLD 6 6 3 3 VSS WP SCK CS 4 5 4 5 VSS SO SI WP The Microchip Technology Inc. 25AA640A/25LC640A (1) (25XX640A ) are 64-Kbit Serial Electrically Erasable PROMs. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. 2003-2021 Microchip Technology Inc. DS20001830G-page 125AA640A/25LC640A 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V SS ......................................................................................................... -0.6V to VCC +1.0V All inputs and outputs w.r.t. V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature under bias.............................................................................................................-40C to +125C ESD protection on all pins..........................................................................................................................................4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS A = -40C to +85C VCC = 1.8V to 5.5V Industrial (I): T DC CHARACTERISTICS Extended (E):TA = -40C to +125C VCC = 1.8V to 5.5V Param. Symbol Characteristic Min. Max. Units Test Conditions No. High-Level D001 VIH1 0.7 VCC VCC +1 V Input Voltage IL1 -0.3 0.3 VCC VVCC2.7V D002 V Low-Level Input Voltage D003 VIL2 -0.3 0.2 VCC VVCC < 2.7V D004 VOL 0.4 VIOL = 2.1 mA Low-Level OutputVoltage D005 VOL 0.2 VIOL = 1.0 mA, VCC < 2.5V High-Level D006 VOH VCC -0.5 V IOH = -400 A Output Voltage LI Input Leakage Current 1 A CS = VCC, VIN = VSS or VCC D007 I D008 ILO Output Leakage Current 1 A CS = VCC, VOUT = VSS or VCC Internal Capacitance TA = +25C, CLK = 1.0 MHz, D009 CINT 7 pF (all inputs and outputs) VCC = 5.0V (Note 1) VCC = 5.5V FCLK = 10.0 MHz 5 mA SO = Open D010 ICC Read CC = 2.5V FCLK = 5.0 MHz V 2.5 mA Operating Current SO = Open 5 mAVCC = 5.5V D011 ICC Write 3 mAVCC = 2.5V CS = VCC = 5.5V, 5 A Inputs tied to VCC or VSS, +125C D012 ICCS Standby Current = VCC = 5.5V, CS 1 A Inputs tied to VCC or VSS, +85C Note 1: This parameter is periodically sampled and not 100% tested. DS20001830G-page 2 2003-2021 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
AT9
ATM
Atmel
Atmel Wireless (VA)
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Microchip / Microsemi
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Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
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Microsemi Corporation
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